Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

标题
Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 26, Issue 8, Pages 085012
出版商
IOP Publishing
发表日期
2011-05-11
DOI
10.1088/0268-1242/26/8/085012

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