Investigation of the effects of interface carrier concentration on ZnO thin film transistors fabricated by atomic layer deposition

标题
Investigation of the effects of interface carrier concentration on ZnO thin film transistors fabricated by atomic layer deposition
作者
关键词
-
出版物
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 42, Issue 23, Pages 235102
出版商
IOP Publishing
发表日期
2009-11-10
DOI
10.1088/0022-3727/42/23/235102

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