Valence band offsets at zinc-blende heterointerfaces with misfit dislocations: A first-principles study

First-principles study of valence band offsets at ZnSnP2/CdS, ZnSnP2/ZnS, and related chalcopyrite/zincblende heterointerfaces

(2013) Yoyo Hinuma et al.   JOURNAL OF APPLIED PHYSICS

Band offsets of CuInSe2/CdS and CuInSe2/ZnS (110) interfaces: A hybrid density functional theory study

(2013) Yoyo Hinuma et al.   PHYSICAL REVIEW B

Absolute deformation potentials and robustab initiomodel for band shifts induced by (001) biaxial strain in group IIIA-VA semiconductors

(2011) Eugene S. Kadantsev et al.   APPLIED PHYSICS LETTERS

VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data

(2011) Koichi Momma et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Mechanisms of edge-dislocation formation in strained films of zinc blende and diamond cubic semiconductors epitaxially grown on (001)-oriented substrates

(2011) Yu. B. Bolkhovityanov et al.   JOURNAL OF APPLIED PHYSICS

Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors

(2009) Yong-Hua Li et al.   APPLIED PHYSICS LETTERS

Atomic structure of misfit dislocations at InAs/GaAs(110)

(2008) R Choudhury et al.   JOURNAL OF PHYSICS-CONDENSED MATTER