Article
Multidisciplinary Sciences
D. C. M. Kwan, M. Kesaria, J. J. Jimenez, V. Srivastava, M. Delmas, B. L. Liang, F. M. Morales, D. L. Huffaker
Summary: A 10 mu m cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array has been reported. The heterostructure on GaSb-on-GaAs was found to be epitaxial, single-crystalline but with reduced material homogeneity, extended lattice defects, and atomic segregation/intermixing compared to that on the GaSb substrate. The strain-induced degradation of material quality was observed by temperature-dependent current-voltage measurements. The T2SL with the IMF array shows potential as an effective route to mitigate the impact of lattice mismatch, allowing for low-cost, scalable manufacturing of focal plane arrays (FPA) for various applications.
SCIENTIFIC REPORTS
(2022)
Article
Chemistry, Multidisciplinary
Eamonn T. Hughes, Mario Dumont, Yingtao Hu, Di Liang, Raymond G. Beausoleil, John E. Bowers, Kunal Mukherjee
Summary: A process has been developed for regrowing thick III-As layers on a thin GaAs template on Si, with a focus on controlling threading dislocation formation. The use of compressively strained dislocation blocking layers leads to a significant reduction in threading dislocation densities by as much as 30x.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Chemistry, Multidisciplinary
Thomas Riedl, Vinay S. Kunnathully, Alexander Trapp, Timo Langer, Dirk Reuter, Joerg K. N. Lindner
Summary: The size-dependent strain relaxation behavior in InAs quantum dots on GaAs(111)A nanopillars has been studied experimentally and theoretically. The experiment reveals a coherent state for small dimensions and misfit dislocations for larger sizes. The analysis suggests a gradual transition between purely elastic and plastic relaxation regimes.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Multidisciplinary Sciences
Xiaomei Li, Bo Han, Ruixue Zhu, Ruochen Shi, Mei Wu, Yuanwei Sun, Yuehui Li, Bingyao Liu, Lifen Wang, Jingmin Zhang, Congbing Tan, Peng Gao, Xuedong Bai
Summary: We used scanning transmission electron microscopy to quantitatively map the lattice parameters and octahedral rotations around misfit dislocations at the BiFeO3/SrRuO3 interface. We found that a huge strain field is achieved near the dislocations, significantly altering the local ferroelectric dipole and magnetic moments near the interface. The strain field and structural distortion can be further tuned by the dislocation type. Our atomic-scale study helps us understand the effects of dislocations in this ferroelectricity/ferromagnetism heterostructure, providing opportunities for designing nanosized electronic and spintronic devices through defect engineering.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
(2023)
Review
Materials Science, Multidisciplinary
Hua Men, Changming Fang, Zhongyun Fan
Summary: This study investigates the effects of the physical and chemical properties of the substrate on prenucleation using classical molecular dynamics and ab initio MD simulations. It reveals that the physical origin of prenucleation is structural templating, which is influenced by the lattice misfit, chemical interaction, and substrate surface roughness at the atomic level. Prenucleation ultimately determines substrate's nucleation potency and provides a precursor for heterogeneous nucleation at the nucleation temperature.
Article
Materials Science, Multidisciplinary
Anuj Bisht, Michael Kalina, Eylul Suadiye, Gunther Richter, Eugen Rabkin
Summary: In this study, nanoscale bimetallic strips were fabricated by one-sided coating with Pd, leading to slight bending of the strips. The temperature-induced shape changes of the Au-Pd strips were investigated via in-situ thermal actuation. The results demonstrate that single crystalline metallic nanowhiskers with controlled curvature, chemical composition, and thermal behavior can be produced using interface engineering and chemical interdiffusion.
Article
Physics, Applied
Long Cheng, Heng Zhang, Ran Xu, Kevin Co, Nicolas Guiblin, Mojca Otonicar, Charles Paillard, Yujia Wang, Brahim Dkhil
Summary: The interaction between domain structure and defects in ferroelectric thin films has been a focus of research. This study demonstrates the role of dislocations in stabilizing the domains of PbTiO3 films on a SrTiO3 substrate during post-annealing above 550 degrees C. The effects of single dislocations and dislocation pairs on domain formation were also explored.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
J. Moneta, G. Staszczak, E. Grzanka, P. Tauzowski, P. Dluzewski, J. Smalc-Koziorowska
Summary: Cross-sectional transmission electron microscopy studies show that a-type dislocations in InGaN/GaN structures deposited along the [0001] direction are post-growth effects caused by stress on lateral surfaces and mechanical processing. Cathodoluminescence mapping reveals the visibility of these defects near the edges of cleaved or polished InGaN/GaN structures. Finite element calculations provide insights into the residual stress distribution near the InGaN/GaN interface at the free edge, and the impact of such defects on device performance is discussed.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Physics, Applied
Yujia Liu, Kevin-Peter Gradwohl, Chen-Hsun Lu, Kaspars Dadzis, Yuji Yamamoto, Lucas Becker, Peter Storck, Thilo Remmele, Torsten Boeck, Carsten Richter, Martin Albrecht
Summary: The formation of misfit dislocations in quantum well layers grown by molecular beam epitaxy can negatively affect qubit behaviors. In this study, we investigated the kinetics and interactions of misfit dislocations by annealing strained Si or Ge layers. The results showed that misfit dislocation propagation is a thermally activated process and blocking interactions can reduce strain relaxation. These findings suggest that it is possible to suppress misfit dislocation formation by reducing temperatures during SiGe heterostructure epitaxy for developing high-performance spin qubits.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Crystallography
B. A. Carter, J. M. Millunchick
Summary: This study investigates the differences in Bi incorporation in superlattice structures grown on InAs(0 0 1) versus InAs(1 1 0) and reveals the influence of crystal orientation and surface morphology on Bi incorporation. X-ray diffraction and atomic force microscopy results show that the presence or absence of Bi droplets on the surface during growth and the amount of deposited Bi affect the Bi incorporation and surface morphology.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Chemistry, Multidisciplinary
Eric R. R. Hoglund, De-Liang Bao, Andrew O'Hara, Thomas W. W. Pfeifer, Md Shafkat Bin Hoque, Sara Makarem, James M. M. Howe, Sokrates T. T. Pantelides, Patrick E. E. Hopkins, Jordan A. A. Hachtel
Summary: Grain boundaries are a common microstructural feature that greatly influence the functionality of various materials. Extensive experimental and theoretical studies have been conducted to understand the correlation between atomic-scale grain boundary structures and macroscopic properties. In this study, a SrTiO3 grain boundary was examined using advanced microscopy and spectroscopy techniques, along with density functional theory. The results provide insights into the impact of individual boundaries on macroscopic properties through the analysis of localized grain boundary vibrations.
ADVANCED MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
De-hua Wang, Xue He, Xue Liu, Bin-hua Chu, Wei Liu, Meng-meng Jiao
Summary: One-dimensional confined hydrogenic impurity states confined in the InAs quantum-well have been studied using the linear variational method. The energy levels and wave functions of the system were calculated, and it was found that the number of basis set functions required depends on the width of the quantum well. The confinement effect of the quantum well on the energy level and binding energy of the hydrogenic impurity state was analyzed.
PHILOSOPHICAL MAGAZINE
(2022)
Article
Physics, Applied
Yujia Liu, Kevin-P. Gradwohl, Chen-Hsun Lu, Thilo Remmele, Yuji Yamamoto, Marvin H. H. Zoellner, Thomas Schroeder, Torsten Boeck, Houari Amari, Carsten Richter, Martin Albrecht
Summary: In this study, the critical thickness for the plastic relaxation of the Si quantum well layer in a SiGe/Si/SiGe heterostructure was investigated using transmission electron microscopy and electron channeling contrast imaging. It was found that misfit dislocation segments form at the critical thickness, and reducing the quantum well thickness can suppress misfit dislocation formation.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Geunhwan Ryu, Soo Seok Kang, Jae-Hoon Han, Rafael Jumar Chu, Daehwan Jung, Won Jun Choi
Summary: The comparative study showed that the threading dislocation density in the InAs layers grown on Si is about 35% higher than that on GaAs. It was also found that reducing the threading dislocation density is crucial for fabricating mid-infrared photodetectors with low dark current and high responsivity on Si.
SOLID-STATE ELECTRONICS
(2021)
Article
Nanoscience & Nanotechnology
Abhinandan Gangopadhyay, Chaomin Zhang, Aymeric Maros, Nikolai Faleev, Richard R. King, Christiana B. Honsberg, David J. Smith
Summary: The atomic-scale structure of extended defects in GaAs/GaAs1-xSbx/GaAs (001) heterostructures has been investigated using aberration-corrected scanning transmission electron microscopy. Two types of defects were identified: a dissociated screw dislocation or a partial dislocation dipole at the tensile-strained GaAs(cap)/GaAs0.34Sb0.66 interface, and a dissociated 90 degrees dislocation at the compressively-strained GaAs0.91Sb0.09/GaAs(substrate) interface. The intrinsic stacking faults associated with these defects were bounded by Shockley partial dislocations.
SCRIPTA MATERIALIA
(2023)
Review
Physics, Applied
David R. Bowler, Jack S. Baker, Jack T. L. Poulton, Shereif Y. Mujahed, Jianbo Lin, Sushma Yadav, Zamaan Raza, Tsuyoshi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS
(2019)
Article
Physics, Condensed Matter
Chathurangi Kumarasinghe, David R. Bowler
JOURNAL OF PHYSICS-CONDENSED MATTER
(2020)
Correction
Chemistry, Physical
Yueqi Li, Marius Buerkle, Guangfeng Li, Ali Rostamian, Hui Wang, Zixiao Wang, David R. Bowler, Tsuyoshi Miyazaki, Limin Xiang, Yoshihiro Asai, Gang Zhou, Nongjian Tao
Article
Chemistry, Physical
Ayako Nakata, Jack S. Baker, Shereif Y. Mujahed, Jack T. L. Poulton, Sergiu Arapan, Jianbo Lin, Zamaan Raza, Sushma Yadav, Lionel Truflandier, Tsuyoshi Miyazaki, David R. Bowler
JOURNAL OF CHEMICAL PHYSICS
(2020)
Article
Chemistry, Multidisciplinary
Teruo Hirakawa, David R. Bowler, Tsuyoshi Miyazaki, Yoshitada Morikawa, Lionel A. Truflandier
JOURNAL OF COMPUTATIONAL CHEMISTRY
(2020)
Article
Chemistry, Physical
Lionel A. Truflandier, Rivo M. Dianzinga, David R. Bowler
JOURNAL OF CHEMICAL PHYSICS
(2020)
Article
Multidisciplinary Sciences
Jack S. Baker, David R. Bowler
ADVANCED THEORY AND SIMULATIONS
(2020)
Article
Physics, Multidisciplinary
M. Spera, A. Scarfato, A. Pasztor, E. Giannini, D. R. Bowler, Ch Renner
PHYSICAL REVIEW LETTERS
(2020)
Article
Physics, Multidisciplinary
Jack S. Baker, David R. Bowler
Summary: By engraving trenches on the surfaces of ultrathin ferroelectric films, control over the orientation of FE domain walls can be achieved, allowing them to function as useful nanocircuits. Through large scale density functional theory simulations, the mechanism responsible for parallel alignment of domain walls and surface trenches has been explored, showing how it can be explained by the arrangement of electric dipole moments.
PHYSICAL REVIEW LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Koichi Murata, Shuhei Yagi, Takashi Kanazawa, Satoshi Tsubomatsu, Christopher Kirkham, Koh-ichi Nittoh, David R. Bowler, Kazushi Miki
Summary: Conventional doping processes are no longer suitable for creating extreme structures like a delta-doped layer with multiple elements within a silicon crystal. In this study, a (Bi + Er)-delta-doped layer was successfully formed based on surface nanostructures, with subsequent post-annealing processing essential for activating the dopants. Electric transport measurement and photoluminescence study confirmed the activation of both Bi and Er dopants after post-annealing at moderate temperature.
Article
Physics, Multidisciplinary
Ayako Nakata, David R. Bowler, Tsuyoshi Miyazaki
Summary: This article reviews the application of the multi-site support function (MSSF) method in large-scale density functional theory (DFT) calculations. The MSSF method reduces computational time while maintaining accuracy, and can be applied to materials with complex structures.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
(2022)
Article
Chemistry, Physical
Jack S. Baker, Tsuyoshi Miyazaki, David R. Bowler
ELECTRONIC STRUCTURE
(2020)
Article
Materials Science, Multidisciplinary
Jack S. Baker, David R. Bowler
Article
Materials Science, Multidisciplinary
J. Kane Shenton, David R. Bowler, Wei Li Cheah
Article
Materials Science, Multidisciplinary
M-L Mottas, T. Jaouen, B. Hildebrand, M. Rumo, F. Vanini, E. Razzoli, E. Giannini, C. Barreteau, D. R. Bowler, C. Monney, H. Beck, P. Aebi
