Article
Optics
Horacio Soto-Ortiz, Gerson Torres-Miranda
Summary: This study investigates the temperature dependence of the effective piezoelectric constant (e14e) in strained [111]-oriented quantum wells embedded within a semiconductor optical amplifier (SOA). The method used in this study is insensitive to segregation phenomenon and temperature dependence of the bandgap energy. Unlike previous research, the results show that the magnitude of e14e decreases as temperature increases.
CHINESE OPTICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Arpit Nandi, David Cherns, Indraneel Sanyal, Martin Kuball
Summary: Heteroepitaxial growth of beta-Ga2O3 on (001) diamond by MOCVD was achieved, and the epitaxial relationship and crystal structure were studied using TEM.
CRYSTAL GROWTH & DESIGN
(2023)
Review
Optics
Eric Tournie, Laura Monge Bartolome, Marta Rio Calvo, Zeineb Loghmari, Daniel A. Diaz-Thomas, Roland Teissier, Alexei N. Baranov, Laurent Cerutti, Jean-Baptiste Rodriguez
Summary: This article reviews the research field of mid-infrared semiconductor lasers integrated on Si substrates, with a focus on the epitaxial integration of antimonide lasers. It explains the high-performance diode lasers, quantum cascade lasers, and interband cascade lasers achieved through molecular-beam epitaxy and metal-organic vapor phase epitaxy techniques. The article also discusses the potential of etching the facets of antimonide lasers grown on Si for photonic integrated circuits.
LIGHT-SCIENCE & APPLICATIONS
(2022)
Article
Chemistry, Multidisciplinary
Junjie Yang, Keshuang Li, Hui Jia, Huiwen Deng, Xuezhe Yu, Pamela Jurczak, Jae-Seong Park, Shujie Pan, Wei Li, Siming Chen, Alwyn Seeds, Mingchu Tang, Huiyun Liu
Summary: This study clarifies the mechanism of APB annihilation and the interaction between TDs and periodic APBs during the growth of GaAs on a CMOS-compatible Si (001) substrate. It is found that both APBs and TDs can be reduced simultaneously by optimizing GaAs growth methods. This finding opens up possibilities for growing high-performance III-V optoelectronic devices on CMOS-compatible Si (001) substrates.
Article
Physics, Applied
L. Mehmel, R. Issaoui, O. Brinza, A. Tallaire, V. Mille, J. Delchevalrie, S. Saada, J. C. Arnault, F. Benedic, J. Achard
Summary: By employing a growth strategy based on micrometric laser-pierced hole arrays, the dislocation density in heteroepitaxial chemical vapor deposition diamond can be significantly reduced, reaching an average value equivalent to that typically measured for commercial type Ib single crystal diamonds.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Tomohiko Nakajima, Yuuki Kitanaka
Summary: High-quality, uniaxially oriented, and flexible PbZr0.52Ti0.48O3 (PZT) films were fabricated on flexible RbLaNb2O7/BaTiO3 (RLNO/BTO)-coated polyimide (PI) substrates using a photo-assisted chemical solution deposition (PCSD) process. The RLNO seed layer, grown only at 40 mJ center dot cm(-2) at 300 degrees C, played a crucial role in orienting the growth of the PZT film and suppressing micro-cracks. This is the first demonstration of PZT films crystallized directly on flexible substrates.
Article
Materials Science, Multidisciplinary
Wenqiang Xu, Shengrui Xu, Hongchang Tao, Yuan Gao, Xiaomeng Fan, Jinjuan Du, Lixia Ai, Liping Peng, Jinfeng Zhang, Jincheng Zhang, Yue Hao
Summary: By using an h-BN insertion layer, single crystal GaN film was successfully grown on a polycrystalline diamond substrate, addressing the challenge of combining GaN and diamond. Through process optimization, the full width at half maximum and surface roughness of GaN film were significantly reduced, while the yellow luminescence caused by carbon impurity was suppressed. This successful preparation offers a new solution to the heat dissipation issue that has hindered the development of GaN-based power devices.
Article
Materials Science, Multidisciplinary
J. L. Wang, S. J. She, F. Gaillard, G. Niu, B. Vilquin, N. Barrett
Summary: The study found that the out-of-plane polarized surface of epitaxial, TiO2-terminated, BaTiO3(100) thin films affects the desorption reaction of H2O. As the in-plane strain increases, the apparent activation energy of desorption significantly increases, indicating that the strain-induced ferroelectric distortion affects the strength of the chemical bond.
Article
Multidisciplinary Sciences
Masanori Kodera, Keisuke Ishihama, Takao Shimizu, Hiroshi Funakubo
Summary: Ferroelectric thin films have great potential for use in electric devices, and a Bi2SiO5 thin film with (001) orientation was successfully prepared using the pulsed layer deposition technique. By controlling film orientation, a high remanent polarization value was achieved.
SCIENTIFIC REPORTS
(2022)
Article
Materials Science, Multidisciplinary
Yuan-Yuan Cui, Yun-Fei Jia, Fu-Zhen Xuan
Summary: The study investigated the mechanical behavior and deformed microstructure differences between [1 1 1]- and [0 0 1]-oriented austenite micro-pillars in duplex stainless steel manufactured by focused ion beam. It was found that the strain hardening behavior was different in the two orientations, with the formation of a microband and activation of the secondary slip system playing key roles. The calculated strain hardening rates of both orientations were in good agreement with experimental data, indicating that microband-induced plasticity could enhance the mechanical properties of steels.
Article
Materials Science, Multidisciplinary
Mitsuhiro Muta, Suguru Nishikawa, Ataru Ichinose, Yukio Sato, Makoto Arita, Yoshifumi Ikoma, Masashi Mukaida
Summary: Preferred orientation and optical responses were investigated for BaBiO3 films grown by pulsed laser deposition. The films exhibited monoclinic symmetry I2/m and a (110) preferred orientation. The estimated optical bandgaps were around 2.3 eV for direct transition and 2.1 eV for indirect transition. The decay time of photoconductivity was found to be approximately 0.48 sec. The relationship between ultraviolet light-induced photoconductivity and film crystallinity was clarified, with high-quality crystalline BaBiO3 films exhibiting lower photoconductivity, contrary to TiO2 films.
Article
Materials Science, Multidisciplinary
Aleksandr V. Plokhikh, Iryna S. Golovina, Matthias Falmbigl, Igor A. Karateev, Alexander L. Vasiliev, Jason Lapano, Roman Engel-Herbert, Jonathan E. Spanier
Summary: Epitaxial perovskite oxide superlattice structures were successfully formed on Si wafers using atomic layer deposition at a lower temperature than typical deposition methods. The control over stacking sequence of different constituents was demonstrated in various superlattices. Regardless of the sequence, all structures maintained coherent strain with slight compressive strain from SrTiO3 sublayers transmitted to BaTiO3 layers.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Chemistry, Multidisciplinary
Joao Otavio Mendes, Gabriel Aygur, Jesus Ibarra Michel, James Bullock, Daniel Gomez, Enrico Della Gaspera, Joel van Embden
Summary: In this study, highly (001) oriented Sb2Se3 nanorod layers were obtained via a novel template growth method and transferred to functional substrates. Photodetector devices with excellent electrical contact were fabricated using a low-temperature processable SnO2 nanoparticle transport layer and encapsulation/etching techniques. A proof-of-concept self-powered flexible heart rate monitor was also fabricated based on this platform. The achievement of transferable Sb2Se3 nanorod layers has significant implications for the development of new device architectures and potential applications in various fields.
ADVANCED MATERIALS INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Karim Ben Saddik, Basilio J. Garcia, Sergio Fernandez-Garrido
Summary: In this study, the chemical beam epitaxy of GaP1-xNx alloys was investigated, revealing that the N mole fraction exhibits an Arrhenius behavior in relation to growth temperature and precursor fluxes. The results indicate the feasibility of obtaining single-phase and flat GaP1-xNx layers with x up to about 0.04.
Correction
Chemistry, Multidisciplinary
Florian Pantle, Fabian Becker, Max Kraut, Simon Woerle, Theresa Hoffmann, Sabrina Artmeier, Martin Stutzmann
Summary: The study demonstrates the selective area growth of GaN nanowires and nanofins on heteroepitaxial diamond (001) substrates using molecular beam epitaxy. By optimizing the growth conditions and using locally produced substrates, high-quality nanostructures were successfully grown, providing new possibilities for optoelectronic device applications.
NANOSCALE ADVANCES
(2023)
Article
Materials Science, Multidisciplinary
Alexander S. Gouralnik, Alexander Shevlyagin, Igor M. Chernev, Alexander Yu Ustinov, Andrey Gerasimenko, Anton K. Gutakovskii
Summary: Mg2Si films were grown on Si surfaces at high deposition rates using a pulse-type evaporator, allowing for effective accumulation on hot Si surfaces. The structure, crystal quality, and formation mechanism of the films were studied, demonstrating the potential for Si/Mg2Si solar cell technologies.
MATERIALS CHEMISTRY AND PHYSICS
(2021)
Article
Physics, Applied
V. P. Popov, V. A. Antonov, F. Tikhonenko, S. M. Tarkov, A. K. Gutakovskii, I. E. Tyschenko, A. Miakonkikh, A. A. Lomov, A. E. Rogozhin, K. Rudenko
Summary: Silicon wafers with ultrathin buried high-k oxide layers were fabricated by atomic layer deposition, showing high thermal stability up to 1100 degrees C in silicon-on-ferroelectric structures. Silicon-ferroelectric-silicon structures with hafnia BOX and alumina inclusions demonstrated increased thermal stability for hafnia or hafnia-zirconia alloys up to 900 degrees C, making them compatible with current CMOS technology, promising integrated circuits for neuromorphic computation and optoelectronic switching devices.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
Alexander Malikov, Anatoliy Orishich, Igor Vitoshkin, Natalia Bulina, Evgenij Karpov, Anton Gutakovskii, Stepan Batsanov, Alexey Ancharov, Roman Tabakaev
Summary: The study found that the main phases T-1 and T-2 as well as the δ' hardening phase were formed in the heat-treated Al-2.8Cu-1.7Li alloy laser welded joints, resulting in an improved tensile strength. After quenching, the tensile strength of the welded joints was about 85% of that of the base metal, and after artificial aging, it approached 93% of the base metal's tensile strength.
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
(2021)
Article
Materials Science, Multidisciplinary
Yu. V. Fedoseeva, L. G. Bulusheva, I. P. Asanov, A. G. Kurenya, A. V. Gusel'nikov, E. A. Maksimovskiy, D. V. Gulyaev, K. S. Zhuravlev, A. K. Gutakovskii, A. V. Okotrub
Summary: The deposition of CdS nanoparticles on aligned multi-walled carbon nanotube arrays through electrical stimulation was investigated, revealing different luminescence properties based on synthesis method. The study demonstrated the promising effect of electrical field on enhancing the growth rate of CdS nanocrystals.
Article
Materials Science, Multidisciplinary
Irina Antonova, Marina B. Shavelkina, Dmitriy A. Poteryaev, Nadezhda A. Nebogatikova, Artem I. Ivanov, Regina A. Soots, Anton K. Gutakovskii, Irina I. Kurkina, Vladimir A. Volodin, Vladimir A. Katarzhis, Peter P. Ivanov, Alexey N. Bocharov
Summary: A novel method for creating composite nanoparticles with various morphology and electric properties using small boron nitride nanosheets and graphene flakes is proposed. The composite nanoparticles and films fabricated from structures synthesized in helium plasma jet show significant changes in electric properties, with potential for electronic applications. The composites exhibit nonlinear current-voltage characteristics, with some showing switching up to four orders of magnitude, indicating potential for use in electronic devices such as memristors and logic elements.
ADVANCED ENGINEERING MATERIALS
(2022)
Article
Chemistry, Physical
Dmitriy Dmitriev, Danil A. Kolosovsky, Tatyana A. Gavrilova, Anton K. Gutakovskii, Alexander Toropov, Konstantin S. Zhuravlev
Summary: Experimental study showed that an InP1-xAsx layer is formed on the oxide-coated InP(001) surface during annealing in an arsenic flux, with transformation occurring at a temperature about 60 degrees C higher than on a clean surface. The amount of arsenic substitution for phosphorus increases with annealing temperature, leading to the formation of InAs islands of varying sizes and densities. Despite local inhomogeneities, a uniform InPAs layer covers the main surface area, with InAs islands occupying about 1.5% of the surface area at an annealing temperature of 540 degrees C.
Article
Materials Science, Multidisciplinary
V. P. Popov, F. Tikhonenko, V. A. Antonov, S. M. Tarkov, A. K. Gutakovskii, V. Vdovin, S. G. Simakin, K. Rudenko
Summary: The formation process of gettering layers in CO+ ion implanted silicon wafers was studied during direct bonding and thermal cleavage/transfer processes. High leakage currents indicated incomplete annealing of defects after standard heat treatments. Additionally, an intermediate layer was detected at Si/SiO2 heteroboundaries during subsequent heat treatments at 600-900 degrees C, leading to an increase in Di states density.
MATERIALS TODAY COMMUNICATIONS
(2021)
Article
Chemistry, Physical
Nikolay G. Galkin, Konstantin N. Galkin, Sergei A. Dotsenko, Illia A. Serhiienko, Vladimir V. Khovaylo, Anton K. Gutakovskii
Summary: Ordered embedding of CrSi2 and β-FeSi2 nanocrystals into an n-type Si(111) substrate has been demonstrated, leading to a change in Seebeck coefficient sign and determination of hole injection mechanisms.
APPLIED SURFACE SCIENCE
(2021)
Article
Physics, Applied
V. A. Zinovyev, A. F. Zinovieva, Zh Smagina, A. Dvurechenskii, V. Vdovin, A. K. Gutakovskii, L. Fedina, O. M. Borodavchenko, V. D. Zhivulko, A. Mudryi
Summary: The photoluminescence of Ge/Si nanostructures synthesized by Ge+ ion bombardment is studied, showing advantages in telecom wavelengths over epitaxial structures with GeSi quantum dots, and providing a basis for creating efficient light emitters compatible with existing Si technology.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
M. S. Aksenov, N. A. Valisheva, D. V. Gorshkov, G. Y. Sidorov, I. P. Prosvirin, A. K. Gutakovskii
Summary: This study investigates the morphology, chemical composition, and electronic properties of Al2O3/InGaAs interfaces formed in different DC plasma conditions with and without fluorinated anodic oxide layers. The results show that thin fluorinated anodic oxide layers, along with annealing at 300°C, can reduce the density of interface states by 3-4 times over the entire bandgap. However, the interface with a fluorinated oxide is not stable and degrades when heated above 300°C, in contrast to the Al2O3/InGaAs interface.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Physics, Applied
E. G. Zaytseva, O. Naumova, A. K. Gutakovskii
Summary: For comparing the mobility and analyzing the scattering mechanisms of carriers near semiconductor film/insulator interfaces, it is necessary to have the same distribution of free carriers in thin films. This study utilized TCAD simulations of thin-film transistors to find parameters that can tune the potential distribution and, consequently, the distribution of free carriers in films. It was found that the film regime, density of induced carriers, and gate voltage or threshold voltage of transistors are the crucial parameters affecting the distribution. The proposed approach enables a comparative analysis of the mobility in thin films and eliminates errors caused by different carrier distributions due to the coupling effect.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
Mikhail O. Petrushkov, Demid S. Abramkin, Eugeny A. Emelyanov, Mikhail A. Putyato, Oleg S. Komkov, Dmitrii D. Firsov, Andrey V. Vasev, Mikhail Yu. Yesin, Askhat K. Bakarov, Ivan D. Loshkarev, Anton K. Gutakovskii, Victor V. Atuchin, Valery V. Preobrazhenskii
Summary: This study investigates the use of low-temperature GaAs layers as dislocation filters in GaAs/Si heterostructures. The results show that the introduction of LT-GaAs layers and post-growth cyclic annealing significantly improve the quality of GaAs layers, reducing the dislocation density and surface roughness.
Article
Crystallography
Iskander R. Vakhitov, Nikolay M. Lyadov, Vladimir I. Vdovin, Anton K. Gutakovskii, Vladimir I. Nuzhdin, Lenar R. Tagirov, Rustam I. Khaibullin
Summary: This study investigates the potential use of magnetic nanoparticles embedded into semiconductors for semiconducting spintronics. Iron ions were implanted into oxide semiconductors and TiO2 plates, and various techniques were used to analyze the microstructure, elemental composition, and magnetic properties. The results show that high-fluence ion implantation leads to the formation of magnetic nanoparticles of metallic iron beneath the surface of rutile.
Article
Materials Science, Multidisciplinary
T. S. Shamirzaev, D. R. Yakovlev, N. E. Kopteva, D. Kudlacik, M. M. Glazov, A. G. Krechetov, A. K. Gutakovskii, M. Bayer
Summary: Charged exciton recombination and spin dynamics in ultrathin InSb and AlSb quantum wells with an AlAs matrix were studied, revealing strong material intermixing and band alignment types. The circular polarization of photoluminescence Pc induced by a magnetic field showed nonmonotonic behavior at high magnetic fields. A kinetic equation model was developed to interpret the experiment and determine trion radiative lifetimes, spin relaxation times, and heavy-hole g factors for the studied structures.
Article
Chemistry, Multidisciplinary
Sergey Mutilin, Victor Ya Prinz, Lyubov Yakovkina, Anton K. Gutakovskii
Summary: This study developed a strategy for the formation of hybrid Si/VO2 nanostructures compatible with standard silicon technology, based on selective synthesis of VO2 crystals on 3D silicon structures. The method allows for precise arrays of VO2 nanorings on silicon cylinders, opening up possibilities for post-silicon optoelectronics and neuromorphic circuits.