期刊
ULTRAMICROSCOPY
卷 111, 期 1, 页码 73-78出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.ultramic.2010.10.008
关键词
Gallium nitride; Unintentional doping; Scanning capacitance microscopy; Atomic force microscopy
类别
资金
- EPSRC
- Royal Society
- EPSRC [EP/I012591/1, EP/G042330/1, EP/E035167/1, EP/H019324/1, TS/G001383/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [TS/G001383/1, EP/G042330/1, EP/E035167/1, EP/H019324/1, EP/I012591/1] Funding Source: researchfish
To provide a route to the assessment of the impact of inclined facets on unintentional n-type doping during the growth of c-plane GaN on sapphire, thin (100 nm), highly Si-doped (at 10(19) cm(-3)) marker layers have been incorporated into a GaN epitaxial layer grown by a method involving a transition from initial three-dimensional island growth to later, two-dimensional, planar growth. Imaging of the completed epitaxial layer in cross-section by scanning capacitance microscopy reveals the shapes of the islands, which were present during the early stages of growth and the relationship between the facets present and the incorporation of unintentional dopants. The results show that unintentional dopants are mostly incorporated on facets inclined to the [0 0 0 1] direction, and suggest that gaseous impurities present in the MOVPE reactor are one source of dopant species. (C) 2010 Elsevier B.V. All rights reserved.
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