Article
Engineering, Electrical & Electronic
Shu-Ming Hsu, Cheng-En Yang, Min-Hsuan Lu, Yi-Ting Lin, Hung-Wei Yen, I-Chun Cheng
Summary: This study investigates the deposition of p-type SnOx:Ni thin films using reactive rf magnetron co-sputtering and the effect of Ni distribution on the crystalline phase of SnOx:Ni. A high-mobility p-type SnOx:Ni TFT was fabricated with impressive performance, comparable to that of n-type oxide TFT. The results contribute to the development of flexible oxide-TFT-based CMOS technology.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Hye-Mi Kim, Su-Hwan Choi, Hyun Jun Jeong, Jung-Hoon Lee, Junghwan Kim, Jin-Seong Park
Summary: By using atomic layer deposition (ALD) to prepare high-quality tin monoxide (SnO) thin films, high Hall mobility thin film transistors (TFTs) can be obtained with long-term stability.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Juhyung Seo, Teahyun Park, Hocheon Yoo
Summary: This study systematically investigates a solution processed zinc-tin-oxide film and obtains suitable turn-on voltage and uniform charge transport property. The film is applied to a complementary inverter logic and demonstrates excellent circuit performance.
ORGANIC ELECTRONICS
(2022)
Article
Materials Science, Multidisciplinary
Ali Baltakesmez, Betul Guzeldir
Summary: In this study, p-type Zinc Telluride (ZnTe) thin films were deposited on patterned-ITO substrates using RF magnetron sputtering technique. The characterization of the films revealed cluster-like growth and the presence of ZnO grains with increasing thickness. EDS analysis showed that ZnO grains contribute to both n-type and p-type conductivity. The performance of the thin film transistors (TFTs) decreased with increasing thickness, with the film of 100 nm thickness exhibiting the best saturation-current value.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2023)
Article
Nanoscience & Nanotechnology
Chi-Hsin Huang, Yalun Tang, Tzu-Yi Yang, Yu-Lun Chueh, Kenji Nomura
Summary: Research has developed a high-performance p-channel oxide thin-film transistor (TFT) using an atomically thin p-type tin monoxide (SnO) channel, demonstrating good device performance. N-channel oxide TFTs and low-power complementary inverter circuits have been successfully fabricated using metal-liquid printing technology.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Tao Zhang, Weihao Wang, Yunze Liu, Fengzhi Wang, Xinhua Pan, Bin Lu, Zhizhen Ye
Summary: In this study, a novel alloyed semiconductor SnSxO1-x was reported to prevent the conversion of SnO to SnO2. The experiment results showed that SnSxO1-x exhibited better antioxidant performance and improved stability of TFTs after high-temperature annealing.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Kishwar Mashooq, Jaesung Jo, Rebecca L. Peterson
Summary: This study presents the use of a floating metal cap layer and surface passivation to significantly improve the effective mobility and ON-OFF current ratio of p-type SnO TFTs. A record high p-type SnO TFT mobility of 19.1 cm(2)V(-1)s(-1) was achieved using a Ni/Au capping layer. The use of a bilayer TFT structure and appropriate surface passivation led to an approximately 8-fold improvement in the ON-OFF current ratio of SnO TFTs. Additionally, SnO bilayer TFTs exhibited more robust behavior to gate-bias stress compared to traditional SnO TFTs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Physical
Christophe Avis, Jin Jang
Summary: The impact of NF3 plasma treatment on the HfO2 gate insulator of a-SnOx TFTs was studied. The 10 s-treated TFT demonstrated the best stability, with significantly decreased density of states (DOS) and good HfO2/a-SnOx interface quality.
Article
Materials Science, Multidisciplinary
S. Arulkumar, S. Parthiban, J. Y. Kwon, Y. Uraoka, J. P. S. Bermundo, Arka Mukherjee, Bikas C. Das
Summary: In this study, amorphous silicon indium oxide thin films were deposited using a sputtering process at room temperature for thin-film transistor (TFT) active channel applications. The study confirmed the amorphous nature and surface roughness of the deposited films and investigated the effect of different oxygen partial pressures on film properties. The results showed that the annealed films exhibited good performance and stability.
Review
Chemistry, Physical
Zhuping Ouyang, Wanxia Wang, Mingjiang Dai, Baicheng Zhang, Jianhong Gong, Mingchen Li, Lihao Qin, Hui Sun
Summary: This paper summarizes the structure and performance of p-Type oxide TFTs and discusses the progress and challenges in oxide transistor research. The microstructures of three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.
Article
Nanoscience & Nanotechnology
Hye-Mi Kim, Su-Hwan Choi, Han Uk Lee, Sung Beom Cho, Jin-Seong Park
Summary: In situ atomic layer deposition (ALD) of an Al2O3 capping layer can improve the electrical performance in SnO TFTs by protecting the SnO thin films from exposure to air and contamination. Computational thermodynamics and analytical techniques are used to reveal the origin of highly crystallized SnO formations via in situ deposition of Al2O3. State-of-the-art all-ALD-channel complementary metal-oxide-semiconductor inverters using n-type IGZO and p-type SnO TFTs are integrated, demonstrating high performance.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
S. Arulkumar, S. Parthiban, J. Y. Kwon
Summary: The room temperature sputtered indium silicon oxide thin-films were annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The results showed that the annealing temperature had a significant influence on the structure and properties of the thin films, and the highest mobility was achieved at an annealing temperature of 200 degrees Celsius.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Physical
Sevda Saritas
Summary: Fe2-xSnxO3 structures were grown using RF-DC magnetron co-sputtering. The band gap, morphology, and structural features of the film were studied, revealing their influence on the gas sensor response.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2023)
Article
Computer Science, Information Systems
Se-Hyeong Lee, So-Young Bak, Moonsuk Yi
Summary: By optimizing the manufacturing conditions of Al2O3/IZO TFTs, the electrical characteristics and gate bias stability have been improved.
Article
Engineering, Electrical & Electronic
Hui Yang, Weiguang Yang, Jinbao Su, Xiqing Zhang
Summary: The research investigated the optical properties of amorphous Phosphorus-doped Indium-Zinc-Tin-Oxide (aIZTO:P) thin films and their potential as the channel layer for thin film transistors (TFTs). Results showed promising electrical performance and stability of a-IZTO:P TFT, demonstrating its suitability for practical applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)