Multiwavelength Raman analysis of SiOx and N containing amorphous diamond like carbon films

In the current research SiOx and N containing amorphous diamond like carbon (a-C:H) films were deposited on crystalline silicon from hexamethyldisiloxane and hexamethyldisilazane compounds respectively, using closed drift ion beam source and different ion beam energy in a range 300-800 eV. Hydrogen was used as a carrier gas of the precursors. Composition of the films was studied by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The structure of these films was studied employing multiwavelength (325 nm-785 nm) Raman analysis. From the Raman spectra analysis, the characteristic parameters such as the position of G peak, D/G peak intensity ratio as well as dispersion of G (Disp(G)) peak showing topological disorder of sp(2) phase in doped a-C:H films were determined. Analysis of Disp (G) and D/G intensity ratio revealed that in both types of films increase of ion beam energy gives higher sp(3)/sp(2) ratio in the films. (C) 2014 Elsevier B.V. All rights reserved.