Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

Type-II InGaN-GaNAs quantum wells for lasers applications

(2008) Ronald A. Arif et al.   APPLIED PHYSICS LETTERS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

(2008) Ronald A Arif et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Temperature and TiO2 content effects on the photoluminescence properties of Eu3+ doped TiO2–SiO2 powders

(2008) Jianguo Zhao et al.   JOURNAL OF APPLIED PHYSICS

Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm

(2008) Hongping Zhao et al.   OPTICAL AND QUANTUM ELECTRONICS