Effect of the thickness of the TiO x /TiO2 layers on their memristor properties

Resistive switching in metal-insulator-metal structures based on germanium oxide and stabilized zirconia

(2014) O. N. Gorshkov et al.   TECHNICAL PHYSICS LETTERS

The effect of the memristor electrode material on its resistance to degradation under conditions of cyclic switching

(2014) Yu. V. Khrapovitskaya et al.   TECHNICAL PHYSICS LETTERS

Low voltage resistive switching devices based on chemically produced silicon oxide

(2013) Can Li et al.   APPLIED PHYSICS LETTERS

Defective TiO2 with oxygen vacancies: synthesis, properties and photocatalytic applications

(2013) Xiaoyang Pan et al.   Nanoscale

Memristor effect on bundles of vertically aligned carbon nanotubes tested by scanning tunnel microscopy

(2013) O. A. Ageev et al.   TECHNICAL PHYSICS

Polar Charges Induced Electric Hysteresis of ZnO Nano/Microwire for Fast Data Storage

(2011) Jinhui Song et al.   NANO LETTERS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

A Family of Electronically Reconfigurable Nanodevices

(2009) J. Joshua Yang et al.   ADVANCED MATERIALS

Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory

(2008) R. Dong et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE