Band offsets and work function control in field effect transistors

Gate Oxides Beyond SiO2

(2011) Darrell G. Schlom et al.   MRS BULLETIN

Oxygen defect accumulation at Si:HfO2 interfaces

(2008) C. Tang et al.   APPLIED PHYSICS LETTERS

Te-induced modulation of the Mo∕HfO2 interface effective work function

(2008) Ka Xiong et al.   APPLIED PHYSICS LETTERS

p-type Fermi level pinning at a Si:Al2O3 model interface

(2008) L. R. C. Fonseca et al.   APPLIED PHYSICS LETTERS

Segregation of oxygen vacancy at metal-HfO2 interfaces

(2008) Eunae Cho et al.   APPLIED PHYSICS LETTERS

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

(2008) P. D. Kirsch et al.   APPLIED PHYSICS LETTERS

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

(2008) Kunihiko Iwamoto et al.   APPLIED PHYSICS LETTERS

Metal Electrode/High-$k$ Dielectric Gate-Stack Technology for Power Management

(2008) Byoung Hun Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes

(2007) Huang-Chun Wen et al.   MICROELECTRONIC ENGINEERING