Oxygen defect accumulation at Si:HfO2 interfaces - Peeref

标题

Oxygen defect accumulation at Si:HfO2 interfaces

作者

关键词

-

出版物

APPLIED PHYSICS LETTERS

Volume 92, Issue 18, Pages 182908

出版商

AIP Publishing

发表日期

2008-05-12

DOI

10.1063/1.2917576

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Protocol

Reagent

Reprint

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