Article
Chemistry, Physical
Chen-Hsiang Ling, Chun-Yi Chou, Tsai-Fu Chung, Jing-Jong Shyue, Jer-Ren Yang, Miin-Jang Chen
Summary: Layer-by-layer conformal atomic layer etching (cALE) technique achieves precise etching of Ge with self-limiting and self-stop processes, showing linear dependence of etching depth on cALE cycles, accurate etching rate, and low surface roughness without damaging the Ge surface.
SURFACES AND INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Shaoying Ke, Jiahui Li, Jie Wang, Jinrong Zhou, Zhiwei Huang, Jinlong Jiao, Ruoyun Ji, Songyan Chen
Summary: By comparing Ge/SOI wafer bonding with amorphous Ge and polycrystalline Ge interlayers, it is found that polycrystalline Ge can better improve the quality of Ge film as it serves as both a perfect lattice blocking layer and a gas transporter to absorb bubbles, helping to eliminate bubbles and dislocations.
Article
Engineering, Manufacturing
Wei Feng, Haruo Shimamoto, Tsuyoshi Kawagoe, Ichirou Honma, Masato Yamasaki, Fumitake Okutsu, Takatoshi Masuda, Katsuya Kikuchi
Summary: Wafer warpage adversely affects device yield, performance, and reliability by affecting photolithography resolution, process alignment, and wafer bonding. The increase in metal layers exacerbates the warpage problem. Through experiments and simulation, we investigate the warpage issue induced by the Wafer-to-Wafer (W2W) bonding process. The study reveals that the warpage induced by the W2W bonding process is three times the warpage of a single wafer and can be up to seven times in a multi-stack wafer bonding.
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
(2023)
Article
Nanoscience & Nanotechnology
Jeong Woon Bae
Summary: A fabricated wafer sensor was able to measure temperature accurately even at temperatures below -30 degrees Celsius, exhibiting stable performance and not causing any damage to the process chamber. The temperature distribution of the wafer on the electrostatic chuck (ESC) in the capacitively-coupled-plasma etching equipment ranged from 127.19 to 136.65 degrees Celsius, with a standard deviation of 2.34 degrees Celsius over the entire 300 mm area.
SCIENCE OF ADVANCED MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Mark Ferguson, Mohamed Najah, Frederic A. Banville, Mohamed Boucherit, Paul Gond-Charton, Jacques Renaud, Luc Frechette, Francois Boone, Serge Ecoffey, Serge A. Charlebois
Summary: This study explores the compatibility of Ru with Al-Ge eutectic wafer bonding. Experimental results show that Ru is stable and offers good melt wettability in the presence of Al and Ge. The melting temperature of Al-Ge eutectic is found to decrease slightly in the presence of Ru contamination within a specific range. Wafer-level packaged devices and MEMS with Ru contacts demonstrate strong bond outcomes. These findings suggest that Ru has high compatibility with Al-Ge eutectic bonding.
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
(2022)
Article
Engineering, Electrical & Electronic
Zongpei Li, Donglin Huang, Jinlong Jiao, Ziwei Wang, Cheng Li, Wei Huang, Shaoying Ke, Songyan Chen
Summary: This paper investigates the bonding of GaAs wafer and Si wafer with an amorphous Ge intermediate layer. It is found that dislocations form on the GaAs surface during annealing, with the density increasing as the annealing temperature rises. Additionally, pits are observed near the boundary of bonded and unbonded regions at higher annealing temperatures, leading to the cracking of the GaAs surface and generation of dislocations.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Chemistry, Physical
Donglin Huang, Ruoyun Ji, Liqiang Yao, Jinlong Jiao, Xiaoqiang Chen, Cheng Li, Wei Huang, Songyan Chen, Shaoying Ke
Summary: This study reports the nucleation of dislocations in Ge/Si bonded pairs annealed at low temperatures (≤400 degrees C), revealing two types of dislocation networks near the bonded interface. Thermal stress is identified as the main driving force for dislocation nucleation, with the annealing temperature impacting the type and distribution of dislocations. A kinetic model is constructed to explain the strain relaxation process and dislocation behavior, showing that heterogeneous nucleation dominates at low annealing temperatures while a multiplication mechanism becomes active at elevated temperatures.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Physical
Kaname Watanabe, Ryo Takigawa
Summary: We proposed a room-temperature wafer-bonding method using activated Si atomic layer and verified its effectiveness for the fabrication of glass or sapphire-based LiNbO3-on-insulator (LNOI) devices for radio-frequency photonic applications. The tensile strength of the fabricated wafers exceeded 23 MPa, which indicates a strong bond between LiNbO3 and glass or sapphire wafers. Atomic-structure analysis confirmed the effectiveness of the activated Si atomic layer as an adhesive for LiNbO3/glass and LiNbO3/sapphire, and the amorphous Si atomic layer showed high transmittance over a wide range of wavelengths.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Xiaohan Zeng, Wenbo Luo, Kaisheng Zhang, Shitian Huang, Yao Shuai, Xin Hao, Chuangui Wu, Wanli Zhang
Summary: This study proposes a manufacturing scheme for LiTaO3 PIR detectors, which utilizes bonding and thinning technology. The detector fabricated has higher responsivity and detectivity, and allows monolithic integration with processing circuits or other devices.
IEEE SENSORS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Yongqiang Zhao, Wen Liu, Yidi Bao, Fuhua Yang, Xiaodong Wang
Summary: In this study, we achieved high-strength GaAs/Si direct bonding structures using the plasma-activated bonding method. The surface roughness and height of GaAs wafers were found to have a greater impact on the bonding strength than Si wafers. Additionally, the PAB method effectively controlled the plasma-induced damage in GaAs, resulting in a thin amorphous layer at the GaAs/Si interface.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Multidisciplinary
Kai Takeuchi, Fengwen Mu, Yoshiie Matsumoto, Tadatomo Suga
Summary: This study presents a new concept of surface activated bonding (SAB) using aluminum oxide intermediate layer for bonding glass substrates at room temperature, achieving a transparent bonding interface with good bond strength. Compared to SAB with Si intermediate layer, the optical characteristics at the bonding interface using aluminum oxide are better maintained.
ADVANCED MATERIALS INTERFACES
(2021)
Article
Optics
Hao Liang, Tingting Jin, Chaodan Chi, Jialiang Sun, Xiaolei Zhang, Tiangui You, Min Zhou, Jiajie Lin, Shumin Wang
Summary: This research successfully fabricated communication band InAs QD ridge waveguide lasers on GaAsOI substrates using ion-slicing technique and molecular beam epitaxy growth. The devices showed comparable performance to those on GaAs substrates, demonstrating great potential for highly integrated light sources on silicon for photonic integrated circuits.
Article
Nanoscience & Nanotechnology
Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, Eiji Higurashi
Summary: Direct bonding of diamond (100) substrate and silicon wafer was achieved at 250 degrees C under atmospheric conditions, preserving the crystallinity and achieving successful bonding. By applying pressure and appropriate treatment steps, complete bonding was achieved, despite the presence of some contaminated areas.
SCRIPTA MATERIALIA
(2021)
Article
Engineering, Electrical & Electronic
Tianjiao Gong, Yukio Suzuki, Muhammad Jehanzeb Khan, Karla Hiller, Shuji Tanaka
Summary: In this study, the characteristics of vHF etching through release holes with a diameter of 0.5 μm were investigated. The dependence of through-hole etch rate on the number and distribution of release holes, distance from the release holes, and dimension of sealed cavity was observed. The study also tested the stiction problem in through-hole vHF etching and revealed the role of water as both a by-product and catalyst.
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
(2023)
Article
Materials Science, Multidisciplinary
Jianbo Liang, Yuji Nakamura, Tianzhuo Zhan, Yutaka Ohno, Yasuo Shimizu, Kazu Katayama, Takanobu Watanabe, Hideto Yoshida, Yasuyoshi Nagai, Hongxing Wang, Makoto Kasu, Naoteru Shigekawa
Summary: Direct integration of GaAs and diamond was achieved at room temperature via surface activated bonding, forming an ultrathin crystal defect layer. GaAs TLM patterns on diamond substrates demonstrated excellent heat dissipation properties due to the high thermal conductivity of diamond.
DIAMOND AND RELATED MATERIALS
(2021)
Article
Optics
Min Jet Yap, Jonathan Cripe, Georgia L. Mansell, Terry G. McRae, Robert L. Ward, Bram J. J. Slagmolen, Paula Heu, David Follman, Garrett D. Cole, Thomas Corbitt, David E. McClelland
Article
Physics, Multidisciplinary
Nancy Aggarwal, Torrey J. Cullen, Jonathan Cripe, Garrett D. Cole, Robert Lanza, Adam Libson, David Follman, Paula Heu, Thomas Corbitt, Nergis Mavalvala
Article
Physics, Multidisciplinary
Jonathan Cripe, Torrey Cullen, Yanbei Chen, Paula Heu, David Follman, Garrett D. Cole, Thomas Corbitt
Article
Engineering, Electrical & Electronic
D. Priante, M. Zhang, A. R. Albrecht, R. Bek, M. Zimmer, C. Nguyen, D. Follman, G. D. Cole, M. Sheik-Bahae
Summary: This study demonstrates the high efficiency and performance of MECSELs utilizing silicon carbide heat spreaders, with wavelength tuning capabilities using birefringent filters and achieving a maximum output power of 12.7 W.
ELECTRONICS LETTERS
(2021)
Article
Optics
Marina Trad Nery, Jasper R. Venneberg, Nancy Aggarwal, Garrett D. Cole, Thomas Corbitt, Jonathan Cripe, Robert Lanza, Benno Willke
Summary: This experimental study presents a novel active power stabilization scheme using laser power fluctuations sensed through the motion induced by radiation pressure on a movable mirror. By employing a non-destructive measurement technique, higher sensitivity for power fluctuations can be achieved in this new scheme.
Article
Optics
G. Winkler, L. W. Perner, G-W Truong, G. Zhao, D. Bachmann, A. S. Mayer, J. Fellinger, D. Follman, P. Heu, C. Deutsch, D. M. Bailey, H. Peelaers, S. Puchegger, A. J. Fleisher, G. D. Cole, O. H. Heckl
Summary: The study presents a novel high-reflectance coating technology with record-low excess optical loss, verified through a suite of optical measurements. The unique microfabrication process reduces scatter loss and the low background doping during epitaxial growth significantly reduces absorption.
Article
Engineering, Electrical & Electronic
Davide Priante, Mingyang Zhang, Alexander R. Albrecht, Roman Bek, Michael Zimmer, Catherine L. Nguyen, David P. Follman, Garrett D. Cole, Mansoor Sheik-Bahae
Summary: This paper presents a detailed study on the performance of a membrane external-cavity surface-emitting laser (MECSEL) under different pumping configurations. The authors propose and implement an improved pumping scheme for in-well pumping, which achieves higher output power and efficiency.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Article
Optics
Torrey Cullen, Scott Aronson, Ron Pagano, Marina Trad Nery, Henry Cain, Jonathon Cripe, Garrett D. Cole, Safura Sharifi, Nancy Aggarwal, Benno Willke, Thomas Corbitt
Summary: This letter proposes a method using the optical spring effect to passively stabilize the classical power fluctuations of a laser beam. Through a proof of principle experiment, it demonstrates significant reduction of relative power noise within a certain bandwidth. This method provides new insights for the development of high power laser stability techniques.
Article
Optics
Mingyang Zhang, Alexander R. Albrecht, Catherine Nguyen, David Follman, Garrett D. Cole, Mansoor Sheik-Bahae
Summary: We have developed, analyzed, and demonstrated a novel optically-pumped semiconductor disk laser with an active mirror architecture. The laser is capable of generating an output power of approximately 30W in a TEM00 mode, surpassing the performance of traditional VECSELs.
Article
Quantum Science & Technology
Rainer Kaltenbaek, Markus Arndt, Markus Aspelmeyer, Peter F. Barker, Angelo Bassi, James Bateman, Alessio Belenchia, Joel Berge, Claus Braxmaier, Sougato Bose, Bruno Christophe, Garrett D. Cole, Catalina Curceanu, Animesh Datta, Maxime Debiossac, Uros Delic, Lajos Diosi, Andrew A. Geraci, Stefan Gerlich, Christine Guerlin, Gerald Hechenblaikner, Antoine Heidmann, Sven Herrmann, Klaus Hornberger, Ulrich Johann, Nikolai Kiesel, Claus Laemmerzahl, Thomas W. LeBrun, Gerard J. Milburn, James Millen, Makan Mohageg, David C. Moore, Gavin W. Morley, Stefan Nimmrichter, Lukas Novotny, Daniel K. L. Oi, Mauro Paternostro, C. Jess Riedel, Manuel Rodrigues, Loic Rondin, Albert Roura, Wolfgang P. Schleich, Thilo Schuldt, Benjamin A. Stickler, Hendrik Ulbricht, Christian Vogt, Lisa Woerner
Summary: The objective of MACRO mission is to conduct macroscopic quantum experiments in space to test the foundations of physics at the interface with gravity. Developing necessary technologies and achieving required sensitivities for macroscopic quantum systems in extreme conditions is crucial. Recent scientific advancements promise potential for accomplishing additional science objectives and drive the research campaign.
QUANTUM SCIENCE AND TECHNOLOGY
(2023)
Article
Physics, Applied
G. D. Cole, S. W. Ballmer, G. Billingsley, S. B. Catano-Lopez, M. Fejer, P. Fritschel, A. M. Gretarsson, G. M. Harry, D. Kedar, T. Legero, C. Makarem, S. D. Penn, D. H. Reitze, J. Steinlechner, U. Sterr, S. Tanioka, G. -w. Truong, J. Ye, J. Yu
Summary: In this Perspective, the technological development of large-area and low-noise substrate-transferred GaAs/AlGaAs (AlGaAs) crystalline coatings for interferometric gravitational-wave (GW) detectors is summarized. Recent research and development efforts on crystalline coatings are described, including characterization of novel noise processes and optical metrology on large-area mirrors. The possibilities of expanding the maximum coating diameter and producing low-noise mirrors for future GW detector upgrades are explored, along with the unique requirements and prospective experimental testbeds for these semiconductor-based coatings.
APPLIED PHYSICS LETTERS
(2023)
Article
Astronomy & Astrophysics
Satoshi Tanioka, Daniel Vander-Hyde, Garrett D. Cole, Steven D. Penn, Stefan W. Ballmer
Summary: Thermal noise in high-reflectivity mirror coatings is a limitation in ground-based gravitational wave detectors. However, crystalline gallium arsenide and AlGaAs coatings show promise in reducing thermal noise. Our investigation on the electrooptic effect in an AlGaAs coating using a Fabry-Perot cavity concluded that the noise level is below the sensitivity of current and planned gravitational-wave detectors.
Proceedings Paper
Optics
Garrett D. Cole, Catherine Nguyen, David Follman, Gar-Wing Truong, Egbert Krause, Tobias Bohme
Summary: We have developed a high-power-handling deformable mirror device based on a modified Thorlabs DMH40, using a low-loss substrate-transferred crystalline coating as the reflective element. This custom system exhibits similar physical performance but a substantial enhancement in power handling.
SPIE LASER DAMAGE: LASER-INDUCED DAMAGE IN OPTICAL MATERIALS 2022
(2022)
Article
Astronomy & Astrophysics
Elizabeth M. Gretarsson, Andri M. Gretarsson, Garrett D. Cole, Gregory M. Harry, Maya M. Kinley-Hanlon, R. Jason Jones, Steven D. Penn
Summary: In this study, the amplitude dependence of loss in optical coatings was tested using a gentle suspension system and an interferometer. The results showed that the amplitude of the samples did not have a significant impact on the loss within a certain range.
Proceedings Paper
Optics
Mingyang Zhang, Davide Priante, Alexander R. Albrecht, Garrett D. Cole, Mansoor Sheik-Bahae
Summary: In this study, a high-power output of 28.5 W was achieved using a membrane external-cavity surface-emitting laser (MECSEL) platform, with the use of in-well pumping technique to reduce the quantum defect. A multi-pass scheme was also designed to recirculate the pump beam, and a wide tuning range and narrow linewidth were achieved using a birefringent filter.
VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS (VECSELS) XI
(2022)