Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO[sub x]N[sub y] Gate Dielectrics

Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO[sub 2] Gate Dielectrics and Metal Gate

(2010) Hyung-Suk Jung et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO[sub 2] Dielectric Films by In Situ NH[sub 3] Injection

(2009) Jeong Hwan Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Bandgap measurement of thin dielectric films using monochromated STEM-EELS

(2009) Jucheol Park et al.   ULTRAMICROSCOPY

The effect of nitrogen concentration on the band gap and band offsets of HfOxNy gate dielectrics

(2008) X. J. Wang et al.   APPLIED PHYSICS LETTERS

Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations

(2008) Tae Joo Park et al.   JOURNAL OF APPLIED PHYSICS

The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation

(2008) W. J. Maeng et al.   JOURNAL OF APPLIED PHYSICS