AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

This Letter reports on the epitaxial growth, characterization, and device characteristics of crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si(111) substrate. The total nitride stack thickness of the sample grown by the metal-organic chemical vapor deposition technique is about 3.3 +/- 0.1 mu m. The structural and optical properties of these layers are studied by cross-sectional scanning transmission electron microscopy, high-resolution x-ray diffraction, photoluminescence, and micro-Raman spectroscopy techniques. The top AlGaN/GaN heterointerfaces reveal the formation of a two-dimensional electron gas with average Hall mobility values in the range of 1800 to 1900 cm(2)/Vs across such 200 mm diameter GaN on Si(111) samples. The fabricated 1.5 mu m-gate AlGaN/GaN high-electron-mobility transistors exhibited the drain current density of 660 mA/mm and extrinsic transconductance of 210 mS/mm. These experimental results show immense potential of 200-mm diameter GaN-on-silicon technology for electronic device applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4746751]