First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

(2012) Katsumasa Kamiya et al.   APPLIED PHYSICS LETTERS

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

(2011) Blanka Magyari-Köpe et al.   NANOTECHNOLOGY

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

TiO2—a prototypical memristive material

(2011) K Szot et al.   NANOTECHNOLOGY

Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

(2010) Hu Young Jeong et al.   ADVANCED FUNCTIONAL MATERIALS

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

(2010) Seong-Geon Park et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of Interface Formed between Top Electrodes and Epitaxial NiO Films for Bipolar Resistance Switching

(2010) Seung Ran Lee et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Hybrid functional studies of the oxygen vacancy inTiO2

(2010) A. Janotti et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory

(2008) R. Dong et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Effect of on-site Coulomb repulsion termUon the band-gap states of the reduced rutile (110)TiO2surface

(2008) Carmen J. Calzado et al.   PHYSICAL REVIEW B