An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point

Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures

(2011) Z. Q. Liu et al.   JOURNAL OF APPLIED PHYSICS

Ambiguity in the magnitude and direction of the derived interface dipole in lanthanum aluminate heterostructures: Implications and proposed solution

(2011) Z. Q. Liu et al.   JOURNAL OF APPLIED PHYSICS

Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures

(2011) Winfried Mönch   JOURNAL OF APPLIED PHYSICS

Energy band structure of the single crystalline MgO/n-Ge(001) heterojunction determined by x-ray photoelectron spectroscopy

(2010) Kun-Rok Jeon et al.   APPLIED PHYSICS LETTERS

HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

(2010) G. He et al.   APPLIED PHYSICS LETTERS

Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

(2010) H. X. Xu et al.   APPLIED PHYSICS LETTERS

Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

(2010) Shankar Swaminathan et al.   APPLIED PHYSICS LETTERS

Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

(2010) Xiaolei Wang et al.   APPLIED PHYSICS LETTERS

Interface investigation and engineering – achieving high performance polymer photovoltaic devices

(2010) Li-Min Chen et al.   JOURNAL OF MATERIALS CHEMISTRY

Determination of energy level alignment at interfaces of hybrid and organic solar cells under ambient environment

(2010) Robert J. Davis et al.   JOURNAL OF MATERIALS CHEMISTRY

Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation

(2009) Z. C. Yang et al.   APPLIED PHYSICS LETTERS

Wide-bandgap high-k Y2O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high-k HfTiO gate dielectric

(2009) C. X. Li et al.   APPLIED PHYSICS LETTERS

Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric

(2009) Hong Bae Park et al.   APPLIED PHYSICS LETTERS

Origin of electric dipoles formed at high-k/SiO2 interface

(2009) Koji Kita et al.   APPLIED PHYSICS LETTERS

Effect of Al-diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high-k metal-oxide-semiconductor field-effective transistor

(2009) Wenwu Wang et al.   JOURNAL OF APPLIED PHYSICS

Modelling energy level alignment at organic interfaces and density functional theory

(2009) F. Flores et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Band offsets of a ruthenium gate on ultrathin high-κoxide films on silicon

(2009) Sylvie Rangan et al.   PHYSICAL REVIEW B

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

(2008) P. D. Kirsch et al.   APPLIED PHYSICS LETTERS

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

(2008) Kunihiko Iwamoto et al.   APPLIED PHYSICS LETTERS

Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates

(2008) S. Y. Chiam et al.   JOURNAL OF APPLIED PHYSICS