Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures

Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height

(2011) J.-Y. Jason Lin et al.   APPLIED PHYSICS LETTERS

Bandstructure line-up of epitaxial Fe/MgO/Ge heterostructures: A combined x-ray photoelectron spectroscopy and transport study

(2011) M. Cantoni et al.   APPLIED PHYSICS LETTERS

Surface orientation dependent band alignment for CuInSe2–ZnSe–ZnO

(2011) Andreas Hofmann et al.   APPLIED PHYSICS LETTERS

Effects of barrier height inhomogeneities on the determination of the Richardson constant

(2011) K. Sarpatwari et al.   JOURNAL OF APPLIED PHYSICS

Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy

(2010) Jun Wang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Work function shifts, Schottky barrier height, and ionization potential determination of thin MgO films on Ag(001)

(2010) T. Jaouen et al.   APPLIED PHYSICS LETTERS

Energy band structure of the single crystalline MgO/n-Ge(001) heterojunction determined by x-ray photoelectron spectroscopy

(2010) Kun-Rok Jeon et al.   APPLIED PHYSICS LETTERS

Electronic structures of c-plane and a-plane AlN/ZnO heterointerfaces determined by synchrotron radiation photoemission spectroscopy

(2010) J. W. Liu et al.   APPLIED PHYSICS LETTERS

Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy

(2010) M. Akazawa et al.   APPLIED PHYSICS LETTERS

Band lineup between silicon and transparent conducting oxides

(2010) B. Höffling et al.   APPLIED PHYSICS LETTERS

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

(2010) Rahul Suri et al.   APPLIED PHYSICS LETTERS

Si–InAs heterojunction Esaki tunnel diodes with high current densities

(2010) M. T. Björk et al.   APPLIED PHYSICS LETTERS

Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy

(2010) Gaolin Zheng et al.   APPLIED SURFACE SCIENCE

Interface-induced gap states and band-structure lineup at TiO2 heterostructures and Schottky contacts

(2010) Winfried Mönch   JOURNAL OF APPLIED PHYSICS

Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure

(2010) J. B. You et al.   JOURNAL OF APPLIED PHYSICS

Effect of KOH treatment on the Schottky barrier inhomogeneity in Ni/n-GaN

(2010) Hogyoung Kim   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

(2010) K. Shi et al.   Nanoscale Research Letters

Determination of the valence band offsets at HfO2/InN(0001) and InN/In0.3Ga0.7N(0001) heterojunctions using X-ray photoelectron spectroscopy

(2010) Anja Eisenhardt et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Atomic and electronic structures at ZnO and ZrO2 interface for transparent thin-film transistors

(2010) S. J. Wang et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Impact of the Al/Hf ratio on the electrical properties and band alignments of atomic-layer-deposited HfO2/Al2O3on S-passivated GaAs substrates

(2010) You-Pin Gong et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The growth of ZnO on buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

(2010) H.P. Song et al.   SOLID STATE COMMUNICATIONS

Band offsets at ZnO/SiC heterojunction: Heterointerface in band alignment

(2010) Almamun Ashrafi   SURFACE SCIENCE

Fabrication and Characterization of AlN/InN Heterostructures

(2009) Tomoaki Fujii et al.   Applied Physics Express

Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation

(2009) Q. Chen et al.   APPLIED PHYSICS LETTERS

Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

(2009) A. L. Yang et al.   APPLIED PHYSICS LETTERS

Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations

(2009) A. Schleife et al.   APPLIED PHYSICS LETTERS

Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy

(2009) H. P. Song et al.   APPLIED PHYSICS LETTERS

Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy

(2009) A. L. Yang et al.   APPLIED PHYSICS LETTERS

High-temperature current conduction through three kinds of Schottky diodes

(2009) Li Fei et al.   Chinese Physics B

Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy

(2009) J. B. You et al.   JOURNAL OF APPLIED PHYSICS

Electronic transport and Schottky barrier heights of Pt/n-type GaN Schottky diodes in the extrinsic region

(2009) Yow-Jon Lin   JOURNAL OF APPLIED PHYSICS

Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts

(2009) M Mamor   JOURNAL OF PHYSICS-CONDENSED MATTER

Structural and electrical properties of rapidly annealed Ni/Mo Schottky barriers on n-type GaN

(2009) I. Jyothi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedralIn2O3

(2009) P. D. C. King et al.   PHYSICAL REVIEW B

Valence band offset of MgO∕InN heterojunction measured by x-ray photoelectron spectroscopy

(2008) P. F. Zhang et al.   APPLIED PHYSICS LETTERS

Valence band offset of ZnO∕GaAs heterojunction measured by x-ray photoelectron spectroscopy

(2008) P. F. Zhang et al.   APPLIED PHYSICS LETTERS

Band alignment of InN∕GaAs heterojunction determined by x-ray photoelectron spectroscopy

(2008) Riqing Zhang et al.   APPLIED PHYSICS LETTERS

Valence-band offset of epitaxial ZnO∕MgO (111) heterojunction determined by x-ray photoelectron spectroscopy

(2008) Y. F. Li et al.   APPLIED PHYSICS LETTERS

On the explanation of the barrier heights of InP Schottky contacts by metal-induced gap states

(2008) Winfried Mönch   APPLIED PHYSICS LETTERS

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

(2008) N. V. Nguyen et al.   APPLIED PHYSICS LETTERS

Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InN∕GaN heterojunction: Measurement of “intrinsic” band lineup

(2008) Chung-Lin Wu et al.   APPLIED PHYSICS LETTERS

Valence band offset of ZnO∕4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

(2008) H. B. Fan et al.   APPLIED PHYSICS LETTERS

Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by x-ray photoelectron spectroscopy

(2008) S. C. Su et al.   APPLIED PHYSICS LETTERS

Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

(2008) B. L. Zhang et al.   APPLIED PHYSICS LETTERS

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

(2008) T. D. Veal et al.   APPLIED PHYSICS LETTERS

Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

(2008) B. L. Zhang et al.   APPLIED PHYSICS LETTERS

Morphology and electronic properties of metal organic molecular beam epitaxy grown ZnO on hydrogen passivated 6H-SiC(0001)

(2008) Stefan Andres et al.   JOURNAL OF APPLIED PHYSICS

Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates

(2008) S. Y. Chiam et al.   JOURNAL OF APPLIED PHYSICS

Energy band alignment at TiO2∕Si interface with various interlayers

(2008) M. Perego et al.   JOURNAL OF APPLIED PHYSICS

The Determination of Modified Barrier Heights in Ti/GaN Nano-Schottky Diodes at High Temperature

(2008) Seung-Yong Lee et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Properties of isotype n-ZnO/n-GaN heterostructures studied by I–V–T and electron beam induced current methods

(2008) Ya I Alivov et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Effects of oxygen on low-temperature growth and band alignment of ZnO∕GaN heterostructures

(2008) H. F. Liu et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

Band offsets of ultrathin high-κoxide films with Si

(2008) Eric Bersch et al.   PHYSICAL REVIEW B

Surface Electron Accumulation and the Charge Neutrality Level inIn2O3

(2008) P. D. C. King et al.   PHYSICAL REVIEW LETTERS

Annealing temperature effect on electrical and structural properties of Cu/Au Schottky contacts to n-type GaN

(2007) V. Rajagopal Reddy et al.   MICROELECTRONIC ENGINEERING