Article
Crystallography
Cheyenne Lynsky, Ryan C. White, Yi Chao Chow, Wan Ying Ho, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Summary: The role of V-defect density on the performance of green III-nitride LEDs grown on sapphire substrates was experimentally investigated in this study. Results showed that V-defect engineering has the potential to achieve low forward voltage and long wavelength LEDs on sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Chemistry, Multidisciplinary
Eamonn T. Hughes, Mario Dumont, Yingtao Hu, Di Liang, Raymond G. Beausoleil, John E. Bowers, Kunal Mukherjee
Summary: A process has been developed for regrowing thick III-As layers on a thin GaAs template on Si, with a focus on controlling threading dislocation formation. The use of compressively strained dislocation blocking layers leads to a significant reduction in threading dislocation densities by as much as 30x.
CRYSTAL GROWTH & DESIGN
(2022)
Review
Chemistry, Multidisciplinary
Wurui Song, Qi Chen, Kailai Yang, Meng Liang, Xiaoyan Yi, Junxi Wang, Jinmin Li, Zhiqiang Liu
Summary: Group III-nitrides have gained significant attention due to their wide tunable band-gaps and excellent optoelectronic capabilities, making them advantageous for various applications. However, the covalent bond formation in conventional epitaxy hinders the transfer of nitride epilayers, limiting their potential in wearable and flexible electronics. 2D materials offer a solution by avoiding lattice mismatch and allowing for easy delamination and transfer of nitride epilayers. This study provides comprehensive guidelines on exfoliating epitaxial layers using 2D materials to enhance design freedom in nitride devices and discusses different buffers and release layers.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
B. Giroire, A. Garcia, S. Marre, T. Cardinal, C. Aymonier
Summary: A chemistry platform for the continuous synthesis of high-quality III-nitride quantum dots using supercritical solvents and short residence times was demonstrated. The GaN quantum dots produced exhibited strong UV photoluminescence and showed a continuous bandgap shift towards lower energies with increasing indium content. Additionally, an example of metal site substitution in the synthesis of InxGa1-xN solid solution was provided.
CHEMISTRY-A EUROPEAN JOURNAL
(2021)
Article
Chemistry, Physical
Erika Kutalkova, Tomas Plachy
Summary: This study successfully transformed glucose particles into conducting carbonaceous microspheres and used them as a dispersed phase in a novel electrorheological fluid. The resulting fluid exhibited enhanced conductivity and dielectric properties compared to the glucose precursor, and could control viscosity by adjusting electric field intensity.
Article
Nanoscience & Nanotechnology
Martin Ek, C. Leon M. Petersson, Jesper Wallentin, David Wahlqvist, Aylin Ahadi, Magnus Borgstrom, Reine Wallenberg
Summary: Nanowire growth enables creation of embedded heterostructures, but poses challenges for compositional characterization through transmission electron microscopy. Residual strain in certain regions can cause the two characterization techniques to diverge from the true value.
Article
Chemistry, Multidisciplinary
Sara Marina, Edgar Gutierrez-Fernandez, Junkal Gutierrez, Marco Gobbi, Nicolas Ramos, Eduardo Solano, Jeromy Rech, Wei You, Luis Hueso, Agnieszka Tercjak, Harald Ade, Jaime Martin
Summary: Accurate determination of the structural organization of semiconducting polymers is crucial for the development of organic electronic technologies. A new structural model, semi-paracrystalline organization, has been proposed to explain the performance discrepancies in some polymer materials, with parameters such as degree of paracrystallinity and lattice distortion being key factors in charge transport in semi-paracrystalline materials.
MATERIALS HORIZONS
(2022)
Review
Physics, Multidisciplinary
Yu Xu, Jianfeng Wang, Bing Cao, Ke Xu
Summary: This report reviews the main methods for preparing 2D materials, and the recent progress and applications of different techniques for growing III-nitrides based on 2D materials.
Article
Nanoscience & Nanotechnology
Md. Yasir Zamil, Md. Sherajul Islam, Catherine Stampfl, Jeongwon Park
Summary: The vertical piezoelectric effect in two-dimensional group III nitrides is significantly enhanced in XN (X = B, AI, Ga) bilayers due to in-plane interlayer sliding. The sliding operation generates tribological energy, increasing the vertical piezoelectric effect. A reduction in interlayer distance leads to an increased inductive voltage output.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Applied
Jianzhuo Liu, Mingchu Tang, Huiwen Deng, Samuel Shutts, Lingfang Wang, Peter M. Smowton, Chaoyuan Jin, Siming Chen, Alywn Seeds, Huiyun Liu
Summary: InAs/GaAs quantum-dot (QD) lasers offer a promising method for Si-based on-chip light sources. However, the integration of III-V materials on Si introduces a high density of threading dislocations (TDs), which limits the lifetime of the laser device. In this study, a kinetic model was proposed to simulate the degradation process caused by TDs in the early stage of laser operation. By using a rate equation model, the current density in the wetting layer, where the TDs concentrate, was calculated. The rate of degradation of QD lasers with different cavity lengths and quantum-well lasers directly grown on Si substrates was compared by varying the fitting parameters in the calculation of current densities in the kinetic model.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
L. Link, M. Pathak, F. Jach, P. Kozelj, A. Ormeci, P. Hoehn, R. Niewa
Summary: The newly synthesized nitridogermanates (III) Ca-6[Ge2N6] and Sr-6[Ge2N6] exhibit similar crystal structures featuring unprecedented ethane-like anions. They are confirmed to be semiconductors based on resistivity measurements and electronic structure calculations, with different band gaps.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2021)
Article
Engineering, Electrical & Electronic
Yu Han, Ying Xue, Zhao Yan, Kei May Lau
Summary: Epitaxially integrating III-V lasers with Si-photonics using selective area hetero-epitaxy on industry-standard silicon-on-insulator (SOI) platforms has been investigated. By selectively growing InP on (001)-oriented SOI wafers, InP stripes and segments were demonstrated, enabling efficient light interfacing with Si-based photonic devices. The potential of utilizing this selective area growth method to realize fully integrated Si-photonics is illustrated.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2021)
Review
Engineering, Electrical & Electronic
Chao Zhao, Zhaonan Li, Tianyi Tang, Jiaqian Sun, Wenkang Zhan, Bo Xu, Huajun Sun, Hui Jiang, Kong Liu, Shengchun Qu, Zhijie Wang, Zhanguo Wang
Summary: This passage discusses the increasing demand for fabricating III-V semiconductor materials on unconventional substrates, highlighting the potential advantages of defect-free epitaxial growth through two-dimensional materials. The unique optical properties of the epitaxy correlating with their growth conditions are explored, along with their applications in optics and nanophotonics. Challenges and remaining obstacles in fully exploiting the potential for practical applications are also addressed.
PROGRESS IN QUANTUM ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Reetendra Singh, Anand Roy, C. N. R. Rao
Summary: Carbon-doped gallium nitride is a promising material for optoelectronic devices, and studying its defects can provide insights into possible transitions. Carbon-doped GaN was obtained through a simple solid-gas reaction. Spectroscopic analysis revealed the presence of an isolated C-N defect state and the formation of a C-N-O-N complex. In heavily doped samples, blue luminescence related to oxygen defects was quenched, and carbon-related yellow luminescence appeared.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Kevin L. Schulte, John Simon, Myles A. Steiner, Aaron J. Ptak
Summary: This study presents an experimental and computational investigation of III-V heterojunction solar cells and explores the impact of emitter doping, emitter band gap, and heteroband offsets on device efficiency. The results suggest that optimizing the choice of emitter band gap, emitter electron affinity, and/or emitter doping density can maximize efficiency.
CELL REPORTS PHYSICAL SCIENCE
(2023)
Article
Physics, Applied
C. F. Johnston, M. A. Moram, M. J. Kappers, C. J. Humphreys
APPLIED PHYSICS LETTERS
(2009)
Article
Physics, Applied
C. F. Johnston, M. J. Kappers, C. J. Humphreys
JOURNAL OF APPLIED PHYSICS
(2009)
Article
Physics, Applied
M. A. Moram, C. F. Johnston, J. L. Hollander, M. J. Kappers, C. J. Humphreys
JOURNAL OF APPLIED PHYSICS
(2009)
Article
Physics, Applied
T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, C. J. Humphreys
JOURNAL OF APPLIED PHYSICS
(2009)
Article
Physics, Applied
Tongtong Zhu, Carol F. Johnston, Maik Haberlen, Menno J. Kappers, Rachel A. Oliver
JOURNAL OF APPLIED PHYSICS
(2010)
Article
Crystallography
M. A. Moram, C. F. Johnston, M. J. Kappers, C. J. Humphreys
JOURNAL OF CRYSTAL GROWTH
(2009)
Article
Physics, Applied
M. A. Moram, C. F. Johnston, M. J. Kappers, C. J. Humphreys
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2009)
Article
Physics, Applied
M. A. Moram, C. F. Johnston, M. J. Kappers, C. J. Humphreys
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2010)
Article
Engineering, Mechanical
Mohd Fairuz Shamsudin, Cristinel Mares, Carol Johnston, Yoann Lage, Graham Edwards, Tat-Hean Gan
MECHANICAL SYSTEMS AND SIGNAL PROCESSING
(2019)
Proceedings Paper
Engineering, Mechanical
Carol Johnston, Jenny Crump
PROCEEDINGS OF THE ASME 38TH INTERNATIONAL CONFERENCE ON OCEAN, OFFSHORE AND ARCTIC ENGINEERING, 2019, VOL 4
(2019)
Proceedings Paper
Engineering, Petroleum
Carol Johnston
PROCEEDINGS OF THE ASME 36TH INTERNATIONAL CONFERENCE ON OCEAN, OFFSHORE AND ARCTIC ENGINEERING, 2017, VOL 4
(2017)
Proceedings Paper
Engineering, Petroleum
Siak Manteghi, Dave Gibson, Carol Johnston
PROCEEDINGS OF THE ASME 36TH INTERNATIONAL CONFERENCE ON OCEAN, OFFSHORE AND ARCTIC ENGINEERING, 2017, VOL 4
(2017)
Proceedings Paper
Engineering, Petroleum
Yoshinori Ando, Yosuke Oku, Masaaki Sugino, Carol Johnston
PROCEEDINGS OF THE ASME 36TH INTERNATIONAL CONFERENCE ON OCEAN, OFFSHORE AND ARCTIC ENGINEERING, 2017, VOL 4
(2017)
Proceedings Paper
Optics
Tom J. Badcock, Philip Dawson, Menno J. Kappers, Clifford McAleese, Jonathan L. Hollander, Carol F. Johnston, Duggi V. Sridhara Rao, Ana M. Sanchez, Colin J. Humphreys
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2
(2009)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)