☆ 4.4 Article Proceedings Paper

High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy

JOURNAL OF CRYSTAL GROWTH (2008)

期刊

JOURNAL OF CRYSTAL GROWTH

卷 310, 期 17, 页码 4016-4019

出版社

ELSEVIER SCIENCE BV

DOI: 10.1016/j.jcrysgro.2008.06.033

关键词

vapor-phase epitaxy; nitrides; semiconducting aluminum compounds

类别

Crystallography Materials Science, Multidisciplinary Physics, Applied

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摘要

High-temperature growth of thick AlN layers was performed by solid source halide vapor-phase epitaxy (HVPE) with local heating system. it was found that crystalline quality of AlN layers grown on sapphire (0 0 0 1) substrates improved with increase of growth temperature until 1500 degrees C. Degradation of crystalline quality occurred over 1550 degrees C, which is thought to be due to the decomposition of AlN crystal or sapphire substrate during the epitaxial growth. The full-width at half-maximum (FWHM) values of (0 0 0 2) and (10 10) diffraction from the AlN layer grown at 1500 degrees C were 103 and 828 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurement showed a high concentration of oxygen incorporated into the AlN layer through the interface between sapphire and AlN at 1550 degrees C. The near band-edge emission peaking at 208.2 nm was also observed by cathodoluminescence measurement at room temperature. (c) 2008 Elsevier B.V. All rights reserved.

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Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.

JOURNAL OF CRYSTAL GROWTH (2024)

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Article Crystallography

Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater

Thi-Hoai-Thu Nguyen, Jyh-Chen Chen

Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.

JOURNAL OF CRYSTAL GROWTH (2024)

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Article Crystallography

Contributions to the development of crystal growth technologies

Peter Rudolph

Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.

JOURNAL OF CRYSTAL GROWTH (2024)

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