Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin

(2012) Elif Ertekin et al.   PHYSICAL REVIEW LETTERS

Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens

(2011) Si H. Pan et al.   APPLIED PHYSICS LETTERS

Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur

(2011) J. T. Sullivan et al.   APPLIED PHYSICS LETTERS

Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes

(2011) Aurore J. Said et al.   APPLIED PHYSICS LETTERS

Insulator-to-Metal Transition in Sulfur-Doped Silicon

(2011) Mark T. Winkler et al.   PHYSICAL REVIEW LETTERS

Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting

(2010) Brion P. Bob et al.   JOURNAL OF APPLIED PHYSICS

Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al)

(2010) K. Sánchez et al.   PHYSICAL REVIEW B

The role of diffusion in broadband infrared absorption in chalcogen-doped silicon

(2009) Brian R. Tull et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

(2009) Malek Tabbal et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

(2009) E. Antolín et al.   APPLIED PHYSICS LETTERS

Titanium doped silicon layers with very high concentration

(2008) J. Olea et al.   JOURNAL OF APPLIED PHYSICS