Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al)

Theoretical optoelectronic analysis ofMgIn2S4andCdIn2S4thiospinels: Effect of transition-metal substitution in intermediate-band formation

(2010) I. Aguilera et al.   PHYSICAL REVIEW B

Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

(2009) Malek Tabbal et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

(2009) E. Antolín et al.   APPLIED PHYSICS LETTERS

Electronic transport properties of Ti-impurity band in Si

(2009) J Olea et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Assessment through first-principles calculations of an intermediate-band photovoltaic material based on Ti-implanted silicon: Interstitial versus substitutional origin

(2009) K. Sánchez et al.   PHYSICAL REVIEW B

Intermediate band mobility in heavily titanium-doped silicon layers

(2009) G. Gonzalez-Díaz et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Titanium doped silicon layers with very high concentration

(2008) J. Olea et al.   JOURNAL OF APPLIED PHYSICS

Transition-Metal-Substituted Indium Thiospinels as Novel Intermediate-Band Materials: Prediction and Understanding of Their Electronic Properties

(2008) P. Palacios et al.   PHYSICAL REVIEW LETTERS