Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon
出版年份 2013 全文链接
标题
Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 10, Pages 103701
出版商
AIP Publishing
发表日期
2013-09-10
DOI
10.1063/1.4820454
参考文献
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