Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon

标题
Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 10, Pages 103701
出版商
AIP Publishing
发表日期
2013-09-10
DOI
10.1063/1.4820454

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