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Imaging Dislocations in Single-Crystal SrTiO3 Substrates by Electron Channeling

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Coexistence of the bipolar and unipolar resistive switching behaviours in Au/SrTiO3/Pt cells

(2011) Xianwen Sun et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO3thin films with different compliance currents

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Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells

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Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

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Ultrafast resistive switching in SrTiO3:Nb single crystal

(2010) X. T. Zhang et al.   APPLIED PHYSICS LETTERS

Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device

(2010) Hsin-Hung Huang et al.   APPLIED PHYSICS LETTERS

Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

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Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions

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Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films

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Spatial distribution of oxygen vacancies in Cr-doped SrTiO3 during an electric-field-driven insulator-to-metal transition

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Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)

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Memristive switching mechanism for metal/oxide/metal nanodevices

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