On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon

Boron-doped Czochralski-grown silicon wafers dominate the photovoltaic market. Light-induced degradation of these wafers is one of the most significant roadblocks for high-efficiency solar cells. Despite a very large number of publications on this topic, only a few studies have directly investigated the precursor of the defect responsible for this degradation. In this study, using the photoconductance decay measurement method, we identify the precursor of the defect responsible for light-induced degradation. By comparing the photoconductance decay of samples in the different states, we observe the presence of a minority carrier trap in the annealed state, which is not present after degradation. Trap annihilation shows a clear anticorrelation with the generation of the recombination-active boron-oxygen defect, as determined from minority carrier lifetime measurements. Furthermore, it is concluded that a model based on a single-level trap cannot explain the doping-dependent measurements, meaning that the detected trap has two or more energy levels.

Automated summary

Using the photoconductance decay measurement method, this study identified the precursor of the defect responsible for light-induced degradation in boron-doped Czochralski-grown silicon wafers. The presence of a minority carrier trap in the annealed state, which disappeared after degradation, was observed. The study also concluded that the detected trap has two or more energy levels, indicating that a single-level trap model cannot explain the doping-dependent measurements.