Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors

Improvement of InGaZnO4Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing

(2009) Mitsuru Nakata et al.   Applied Physics Express

Gate-bias stress in amorphous oxide semiconductors thin-film transistors

(2009) M. E. Lopes et al.   APPLIED PHYSICS LETTERS

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

The Effect of Deposition Conditions and Annealing on the Performance of High-Mobility GIZO TFTs

(2008) P. Barquinha et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

High-Performance Flexible Hybrid Field-Effect Transistors Based on Cellulose Fiber Paper

(2008) Elvira Fortunato et al.   IEEE ELECTRON DEVICE LETTERS

Factors controlling electron transport properties in transparent amorphous oxide semiconductors

(2008) Hideo Hosono et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering

(2008) Wantae Lim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Transparent, high mobility InGaZnO thin films deposited by PLD

(2007) Arun Suresh et al.   THIN SOLID FILMS