Reduction of Photo-Leakage Current in ZnO Thin-Film Transistors With Dual-Gate Structure

标题
Reduction of Photo-Leakage Current in ZnO Thin-Film Transistors With Dual-Gate Structure
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 4, Pages 509-511
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2011-02-17
DOI
10.1109/led.2011.2105459

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