Fabrication of p-n junction diode using SnO/SnO2 thin films and its device characteristics

标题
Fabrication of p-n junction diode using SnO/SnO2 thin films and its device characteristics
作者
关键词
SnO/SnO<sub>2</sub> diode, raman analysis, TEM, thermal evaporation
出版物
Electronic Materials Letters
Volume 10, Issue 4, Pages 743-747
出版商
Springer Nature
发表日期
2014-08-01
DOI
10.1007/s13391-013-3297-6

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