期刊
ELECTROCHIMICA ACTA
卷 55, 期 3, 页码 743-752出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2009.09.038
关键词
Galvanic displacement; Electroless deposition; Bismuth; Tellurium; Thermoelectric materials
资金
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2009-0082820]
- Hanbat National University, Republic of Korea
Bismuth (Bi) and tellurium (Te) thin films were formed by galvanic displacement of different sacrificial iron group thin films [i.e. nickel (Ni), cobalt (Co) and iron (Fe)] where the formation was systematically investigated by monitoring the change of open circuit potential (OCP), surface morphology and microstructure. The surface morphologies and crystal structures of galvanically displaced Bi or Te thin films strongly depended on the type and thickness of the sacrificial materials. Continuous Bi thin films were successfully deposited with the sacrificial Co. However, dendrites and nanoplatelets were formed from the Ni and Fe thin films. Te thin films were synthesized with all the three sacrificial thin films. Chemical dissolution rate of the sacrificial thin films and mixed potential strongly influenced formation of Bi or Te thin films. (C) 2009 Elsevier Ltd. All rights reserved.
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