期刊
ELECTROCHIMICA ACTA
卷 54, 期 2, 页码 524-529出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2008.07.036
关键词
Electrodeposition; TiO2; CuInSe2; Buffer layer; Heterojunction
资金
- National Research Council of Argentina
- Agencia Nacional de Promocion Cientifica y Tecnologica [PICT 22-21440/04]
- Universidad Nacional de Mar del Plata, Argentina
- SenterNovem, The Netherlands
In2Se3 and CuInSe2 films have been prepared by potentiostatic electrode position from deareated aqueous solutions. The substrate consisted of a duplex layer of dense and nanoporous TiO2 obtained by spray pyrolysis deposition (SPD) and doctor blading. In2Se3 thin films are electrodeposited in between the TiO2/CuInSe2 pn heterojunction to block the electron back flow and lower the interfacial recombination produced upon illumination. The films have been characterized using X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and optical transmission. Annealing the samples in Se atmosphere is essential to improve the crystallinity of the In2Se3 and CuInSe2 films. The combination of TiO2/In2Se3/CuInSe2 shows very good diode behavior with a rectification ratio higher than 100 at +/- 1 V. (c) 2008 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据