Stable room temperature deposited amorphous InGaZnO[sub 4] thin film transistors

标题
Stable room temperature deposited amorphous InGaZnO[sub 4] thin film transistors
作者
关键词
-
出版物
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 26, Issue 3, Pages 959
出版商
American Vacuum Society
发表日期
2008-06-14
DOI
10.1116/1.2917075

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