Effect of ammonia (NH3) plasma treatment on silicon nitride (SiNx) gate dielectric for organic thin film transistor with soluble organic semiconductor

出版年份 2011 全文链接

标题

作者

关键词

出版物

CURRENT APPLIED PHYSICS

Volume 11, Issue 5, Pages S67-S72

出版商

Elsevier BV

发表日期

2011-06-05

DOI

10.1016/j.cap.2011.05.021

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started

CURRENT APPLIED PHYSICS

向作者/读者发起求助以获取更多资源

Protocol

Reagent

Reprint

Find Funding. Review Successful Grants.

Ask a Question. Answer a Question.