The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

(2013) Yao Yao et al.   Applied Physics Express

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

(2013) Zhiyuan He et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

(2013) Zhiyuan He et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Multi-channel DFB laser arrays fabricated by SAG technology

(2013) Can Zhang et al.   OPTICS COMMUNICATIONS

Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

(2011) Yuhua Wen et al.   APPLIED PHYSICS LETTERS

Nonalloyed ohmic contact of AlGaN/GaN HEMTs by selective area growth of single-crystal n+-GaN using plasma assisted molecular beam epitaxy

(2011) Zhi Zheng et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE