Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

(2014) Jai Verma et al.   APPLIED PHYSICS LETTERS

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

(2013) Guowang Li et al.   IEEE ELECTRON DEVICE LETTERS

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

(2012) Brendan Gunning et al.   APPLIED PHYSICS LETTERS

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

(2012) Jia Guo et al.   IEEE ELECTRON DEVICE LETTERS

Passivation and activation of Mg acceptors in heavily doped GaN

(2011) M. E. Zvanut et al.   JOURNAL OF APPLIED PHYSICS

High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface

(2010) Akira Nakajima et al.   Applied Physics Express

Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature

(2010) G. Koblmüller et al.   APPLIED PHYSICS LETTERS

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

(2010) Meng Zhang et al.   APPLIED PHYSICS LETTERS

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Evidence of Two-Dimensional Hole Gas in p-Type AlGaN/AlN/GaN Heterostructures

(2009) Qiyuan Wei et al.   Applied Physics Express

Transient atomic behavior and surface kinetics of GaN

(2009) Michael Moseley et al.   JOURNAL OF APPLIED PHYSICS

Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

(2009) J. Hertkorn et al.   JOURNAL OF APPLIED PHYSICS

Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN

(2008) Gon Namkoong et al.   APPLIED PHYSICS LETTERS

Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

(2008) Shawn D. Burnham et al.   JOURNAL OF APPLIED PHYSICS

Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition

(2007) S. Acar et al.   THIN SOLID FILMS