Temperature dependence of the current in Schottky-barrier source-gated transistors

标题
Temperature dependence of the current in Schottky-barrier source-gated transistors
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 117, Issue 18, Pages 184502
出版商
AIP Publishing
发表日期
2015-05-14
DOI
10.1063/1.4921114

向作者/读者发起求助以获取更多资源

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search