4.7 Article

Effects of Cu/In ratio of electrodeposited precursor on post-sulfurization process in fabricating quaternary CuIn(S,Se)2 thin films

期刊

APPLIED SURFACE SCIENCE
卷 257, 期 20, 页码 8360-8365

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2011.04.021

关键词

Electrodeposition; CuIn(S,Se)(2) thin film; Post-sulfurization; Copper sulfoselenide Cu-(Se,S); Secondary phases

资金

  1. Natural Science Foundation of Hunan Province, China [09JJ3110]

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This paper reports the analysis of S diffusion into electrodeposited CuInSe2 (CISe) precursors during post-sulfurization treatment at 500 degrees C in an Ar/H2S ambient. The characterizations of the sulfurized films by X-ray diffraction, grazing-incidence X-ray diffraction, Auger electron spectroscopy and micro-Raman spectroscopy allow the observation of the strong dependence of S incorporation into these films on the Cu/In ratio of the precursor. AES profiles reveal higher S content along the depth of Cu-rich film than Cu-poor film after sulfurization. Raman Scattering shows that copper sulfoselenides Cu-(Se,S) are only detected in Cu-rich samples. The re-crystallization of films during sulfurization was analyzed and it is presumed that quasi-liquid Cu-Se phases, which are related to Cu/In ratio of precursor, promote continuous incorporation of S into these films. (C) 2011 Elsevier B. V. All rights reserved.

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