Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts

标题
Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 104, Issue 11, Pages 112101
出版商
AIP Publishing
发表日期
2014-03-18
DOI
10.1063/1.4868302

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