4.6 Article

Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates

期刊

APPLIED PHYSICS LETTERS
卷 104, 期 24, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4884203

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  1. National Basic Research Program of China (973 Programs) [2012CB619405]
  2. National Natural Science Foundation of China [51171207, 11174352]

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Spin gapless semiconductors are interesting family of materials by embracing both magnetism and semiconducting due to their unique band structure. Its potential application in future spintronics requires realization in thin film form. In this Letter, we report fabrication and transport properties of spin gapless Mn2CoAl films prepared on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity, and linear magnetoresistance representative of the transport signatures of spin gapless semiconductors. The magnetic properties of the films have also been investigated and compared to that of bulk Mn2CoAl, showing small discrepancy induced by the composition deviation. (C) 2014 AIP Publishing LLC.

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