On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals
出版年份 2014 全文链接
标题
On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 104, Issue 11, Pages 113504
出版商
AIP Publishing
发表日期
2014-03-18
DOI
10.1063/1.4868536
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
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- Measurement of mobility in dual-gated MoS2 transistors
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- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- (2012) Sunkook Kim et al. Nature Communications
- Impact of contact resistance on the transconductance and linearity of graphene transistors
- (2011) Kristen N. Parrish et al. APPLIED PHYSICS LETTERS
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