Combustion-process derived comparable performances of Zn-(In:Sn)-O thin-film transistors with a complete miscibility

Amorphous zinc-indium-tin oxide (alpha-ZITO) thin-film transistors (TFTs) have been prepared using a low-temperature combustion process, with an emphasis on complete miscibility of In and Sn contents. The alpha-ZITO TFTs were comparatively studied in detail, especially for the working stability. The alpha-ZITO TFTs all exhibited acceptable and excellent behaviors from Sn-free TFTs to In-free TFTs. The obtained alpha-ZTO TFTs presented a field-effect mobility of 1.20 cm(2) V-1 s(-1), an on/off current ratio of 4.89 x 10(6), and a long-term stability under positive bias stress, which are comparable with those of the alpha-ZIO TFTs. The In-free alpha-ZTO TFTs are very potential for electrical applications with a low cost. (C) 2014 AIP Publishing LLC.