High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

标题
High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 104, Issue 1, Pages 013307
出版商
AIP Publishing
发表日期
2014-01-14
DOI
10.1063/1.4860998

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