Stable complementary inverters with organic field-effect transistors on Cytop fluoropolymer gate dielectric

We present results on small-molecule p- and n-type organic semiconductors in combination with the highly water repellent fluoropolymer Cytop (TM) as the gate dielectric. Using pentacene and N,N-'-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide (PTCDI-C-13), we fabricated complementary inverters of high electrical quality and stability that are almost unaffected by repeated gate bias stress. The combined p- and n-type field-effect transistors show nearly ideal characteristics, very small hysteresis, and similar saturation mobility (similar to 0.2 cm(2)/V s). Particularly PTCDI-C-13 thin-film transistors exhibit a remarkable performance in the subthreshold regime if chromium is used as contact material for electron injection: a near zero onset and a subthreshold swing as low as 0.6 V/decade.