Non-volatile, electric control of magnetism in Mn-substituted ZnO

Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

(2013) X. L. Wang et al.   APPLIED PHYSICS LETTERS

A comparative study on the ferromagnetic properties of undoped and Mn-doped ZnO

(2012) X.L. Wang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Resistance switching memories are memristors

(2011) Leon Chua   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

ZnO Schottky barriers and Ohmic contacts

(2011) Leonard J. Brillson et al.   JOURNAL OF APPLIED PHYSICS

Electrical control of the ferromagnetic phase transition in cobalt at room temperature

(2011) D. Chiba et al.   NATURE MATERIALS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Electrically Induced Ferromagnetism at Room Temperature in Cobalt-Doped Titanium Dioxide

(2011) Y. Yamada et al.   SCIENCE

Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

(2010) H. Y. Peng et al.   APPLIED PHYSICS LETTERS

Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures

(2010) M. Endo et al.   APPLIED PHYSICS LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

(2009) T. Maruyama et al.   Nature Nanotechnology

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Unification of bulk and interface electroresistive switching in oxide systems

(2008) A. Ruotolo et al.   PHYSICAL REVIEW B