Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition

(2014) Xing Lu et al.   APPLIED PHYSICS LETTERS

In situSiNxgate dielectric by MOCVD for low-leakage-current ultra-thin-barrier AlN/GaN MISHEMTs on Si

(2014) Xing Lu et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

(2013) Shu Yang et al.   IEEE ELECTRON DEVICE LETTERS

Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

(2013) Chihoko Mizue et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

(2013) Sen Huang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electronic surface and dielectric interface states on GaN and AlGaN

(2013) Brianna S. Eller et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

(2012) Rathnait D. Long et al.   Materials

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

(2011) F. Medjdoub et al.   APPLIED PHYSICS LETTERS

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

(2011) Satyaki Ganguly et al.   APPLIED PHYSICS LETTERS

Fabrication and Characterization of Thin-Barrier $ \hbox{Al}_{0.5}\hbox{Ga}_{0.5}\hbox{N/AlN/GaN}$ HEMTs

(2011) Jonathan G. Felbinger et al.   IEEE ELECTRON DEVICE LETTERS

Low-Leakage-Current AlN/GaN MOSHFETs Using $ \hbox{Al}_{2}\hbox{O}_{3}$ for Increased 2DEG

(2011) Tongde Huang et al.   IEEE ELECTRON DEVICE LETTERS

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

(2011) Y.C. Chang et al.   MICROELECTRONIC ENGINEERING

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

(2010) D. Gregušová et al.   JOURNAL OF APPLIED PHYSICS

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

(2010) M. Fagerlind et al.   JOURNAL OF APPLIED PHYSICS

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

(2010) Kai Cheng et al.   JOURNAL OF CRYSTAL GROWTH

Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

(2009) P. Kordoš et al.   APPLIED PHYSICS LETTERS

Impact of in situ SiN[sub x] layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

(2009) E. Cho et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN∕GaN heterojunctions

(2008) Yu Cao et al.   APPLIED PHYSICS LETTERS

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE