期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 12, 页码 1497-1499出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2286090
关键词
III-nitride; gate stack; hysteresis; MIS-HEMTs; plasma nitridation; V-TH instability
资金
- Hong Kong RGC [611311, 611512]
We report an in situ low-damage pre-gate treatment technology in an atomic layer deposition (ALD) system prior to the ALD-Al2O3 deposition, to realize high-quality Al2O3/III-nitride (III-N) interface. The technology effectively removes the poor quality native oxide on the III-N surface while forming an ultrathin monocrystal-like nitridation interlayer (NIL) between Al2O3 and III-N surface. With the pre-gate treatment technology, high-performance Al2O3(NIL)/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors are demonstrated, exhibiting well-behaved electrical characteristics including suppressed gate leakage current, a small subthreshold slope of similar to 64 mV/dec, and a small hysteresis of similar to 0.09 V.
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