4.6 Article

Diamond micro-Raman thermometers for accurate gate temperature measurements

期刊

APPLIED PHYSICS LETTERS
卷 104, 期 21, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4879849

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  1. Engineering and Physics Sciences Research Council (EPSRC)
  2. EPSRC [EP/I033165/1] Funding Source: UKRI
  3. Engineering and Physical Sciences Research Council [EP/I033165/1] Funding Source: researchfish

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Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the gate temperature. This technique enhances peak channel temperature estimation, especially when it is applied in combination with standard micro-Raman thermography. Its application to other metal-covered areas of devices, such as field plates is demonstrated. Furthermore, this technique can be readily applied to other material/device systems. (C) 2014 AIP Publishing LLC.

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