4.6 Article

Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy

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APPLIED PHYSICS LETTERS
卷 103, 期 3, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4816356

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  1. Research Grants Council of Hong Kong (GRF Project) [PolyU500910]
  2. [ITS 029/11]

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Techniques of X-ray and ultraviolet photoelectron spectroscopy are performed to investigate the energy band discontinuity of pulsed-laser-deposited SrTiO3 (STO)/GaAs heterostructure. The valence band offset is determined to be 2.6 eV, while the conduction band offset is deduced to be 0.7 eV. As a consequence, an energy band diagram of STO/GaAs with a type II band alignment forming at the interface is precisely constructed. The chemical states across the STO/GaAs interface are investigated by sputter-depth profile, and there are no detectable interfacial reaction and intermediate layer occurring between the epitaxial STO film and GaAs substrate. (C) 2013 AIP Publishing LLC.

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