4.8 Article

Van der Waals MoS2/Two-Dimensional Perovskite Heterostructure for Sensitive and Ultrafast Sub-Band-Gap Photodetection

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 2, 页码 3356-3362

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c15861

关键词

van der Waals heterostructure; two-dimensional perovskite; type II band alignment; sub-band-gap photodetection; near-infrared detection

资金

  1. National Natural Science Foundation of China [11574119]
  2. Natural Science Foundation of Guangdong Province [2019B151502049]
  3. Guangdong Basic and Applied Basic Research Foundation [2020A1515111192]
  4. Science and Technology Planning Project of Guangzhou [201605030008, 202002030142]

向作者/读者索取更多资源

Researchers have developed a van der Waals heterostructure composed of few-layer 2D perovskite/MoS2 nanoflakes, which exhibits high-sensitivity detection performance over a broad spectral region, including the near-infrared wavelength. The sensitive and ultrafast photoresponse at the near-infrared wavelength is attributed to the strong interlayer transition of sub-band-gap photons and the rapid separation of photogenerated carriers.
Two-dimensional (2D) hybrid perovskites have been extensively studied as the promising light-sensitive materials in the photodetectors owing to their improved structural stability over that of their three-dimensional counterparts. However, the application of the 2D perovskite-based photodetector in the near-infrared (NIR) region is obstructed by the large intrinsic optical band gap. Herein, we develop a novel van der Waals heterostructure composed of few-layer 2D perovskite/MoS2 nanoflakes, which exhibits high-sensitivity detection performance over a broad spectral region, from the visible region to the telecommunication wavelength (i.e., 1550 nm). In particular, the photoresponsivity and specific detectivity under an 860 nm laser reach 121 A W-1 and 4.3 x 10(14) Jones, respectively, whereas the individual nanoflakes show no response under the same wavelength. Meanwhile, the response time at the microsecond (mu s) level is obtained, shortened by around 3 orders of magnitude compared to that of the constituting layers. The sensitive and ultrafast photoresponse at the NIR wavelength stems from the strong interlayer transition of sub-band-gap photons and the rapid separation of the photogenerated carriers by the built-in field within the heterojunction area. Our results not only provide an effective approach to achieve sub-band-gap photodetection in 2D perovskite-based structures but also suggest a universal strategy to fabricate high-performance optoelectronic devices.

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