Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric

Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

(2012) Ki Kang Kim et al.   ACS Nano

Direct extraction of carrier mobility in graphene field-effect transistor using current-voltage and capacitance-voltage measurements

(2012) Zhiyong Zhang et al.   APPLIED PHYSICS LETTERS

Charged impurity scattering in top-gated graphene nanostructures

(2012) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

Versatile sputtering technology for Al2O3gate insulators on graphene

(2012) Miriam Friedemann et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Two-Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks

(2011) Minoru Osada et al.   ADVANCED MATERIALS

Gate-Controlled P–I–N Junction Switching Device with Graphene Nanoribbon

(2011) Shu Nakaharai et al.   Applied Physics Express

Contact resistance in top-gated graphene field-effect transistors

(2011) Bo-Chao Huang et al.   APPLIED PHYSICS LETTERS

A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

(2011) P. J. Zomer et al.   APPLIED PHYSICS LETTERS

BN/Graphene/BN Transistors for RF Applications

(2011) Han Wang et al.   IEEE ELECTRON DEVICE LETTERS

The origins and limits of metal–graphene junction resistance

(2011) Fengnian Xia et al.   Nature Nanotechnology

Electronic transport in two-dimensional graphene

(2011) S. Das Sarma et al.   REVIEWS OF MODERN PHYSICS

Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels

(2010) Song-Lin Li et al.   ACS Nano

Robust High-κ Response in Molecularly Thin Perovskite Nanosheets

(2010) Minoru Osada et al.   ACS Nano

Determination of the Number of Graphene Layers: Discrete Distribution of the Secondary Electron Intensity Stemming from Individual Graphene Layers

(2010) Hidefumi Hiura et al.   Applied Physics Express

Contact resistance in few and multilayer graphene devices

(2010) A. Venugopal et al.   APPLIED PHYSICS LETTERS

Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

(2010) Babak Fallahazad et al.   APPLIED PHYSICS LETTERS

Graphene–dielectric integration for graphene transistors

(2010) Lei Liao et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Influence of Disorder on Conductance in Bilayer Graphene under Perpendicular Electric Field

(2010) Hisao Miyazaki et al.   NANO LETTERS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors

(2010) Aniruddha Konar et al.   PHYSICAL REVIEW B

High-  oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

(2010) L. Liao et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Energy distribution of channel electrons and its impacts on the gate leakage current in graphene field-effect transistors

(2009) Ling-Feng Mao   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Mobility Variations in Mono- and Multi-Layer Graphene Films

(2009) Kosuke Nagashio et al.   Applied Physics Express

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

(2009) Seyoung Kim et al.   APPLIED PHYSICS LETTERS

Water on graphene: Hydrophobicity and dipole moment using density functional theory

(2009) O. Leenaerts et al.   PHYSICAL REVIEW B

Current saturation in zero-bandgap, top-gated graphene field-effect transistors

(2008) Inanc Meric et al.   Nature Nanotechnology

Charged-impurity scattering in graphene

(2008) J.-H. Chen et al.   Nature Physics