Article
Chemistry, Physical
Tao Guo, Hao Wu, Xi Su, Quanbing Guo, Chang Liu
Summary: The study achieved successful growth of uniform high-k ZrO2 thin films on monolayer MoS2, leading to the fabrication of top-gated monolayer MoS2 field-effect transistors with ZrO2/Al2O3 composite dielectrics, demonstrating excellent performance parameters.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Engineering, Electrical & Electronic
Chun-Kuei Chen, Sonu Hooda, Zihang Fang, Manohar Lal, Zefeng Xu, Jieming Pan, Shih-Hao Tsai, Evgeny Zamburg, Aaron Voon-Yew Thean
Summary: In this article, a low-thermal budget defect-engineered process is used to achieve top-gated oxide-semiconductor FeFETs. By engineering the InGaZnOx and InSnOx heterojunction channel, the FeFETs exhibit a highly stabilized ferroelectric memory window and a high current ON/OFF ratio. This technique provides a reliable solution for realizing performant FeFETs with back-end-of-line thermal constraints.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Physical
Xi Zhang, Xiaotong Zhao, Limei Rao, Jing Zhang, Mingchao Xiao, Danlei Zhu, Chunlei Li, Xiaosong Shi, Jie Liu, Jie Liu, Lang Jiang
Summary: The silver mirror reaction (SMR) is introduced to construct top-contact electrodes on 2D organic crystalline thin films, showing promising performance with lower contact resistance and relatively low processing temperature. This approach is applicable to various organic semiconductors and may find practical application in ultra-small pixel mini/micro-LEDs.
Article
Chemistry, Analytical
Naruto Miyakawa, Ayumi Shinagawa, Yasuko Kajiwara, Shota Ushiba, Takao Ono, Yasushi Kanai, Shinsuke Tani, Masahiko Kimura, Kazuhiko Matsumoto
Summary: Solution-gated graphene field-effect transistors (SG-GFETs) are an ideal platform for sensing biomolecules due to their high electron/hole mobilities and 2D nature. However, the drift of transfer curves in electrolyte solutions can make it difficult to accurately estimate analyte concentrations. Pre-treatment with sufficient cations can counteract this drift, resulting in a significant reduction of drift during measurements in phosphate buffer solution. X-ray photoelectron spectroscopy analysis confirmed the accumulation of sodium ions in the pre-treated GFETs, highlighting the effectiveness of the proposed method for accurate estimation of target analyte concentrations.
Article
Engineering, Electrical & Electronic
Kuruva Hemanjaneyulu, Jeevesh Kumar, Mayank Shrivastava
Summary: This paper presents the limitations and failure conditions of the Y-Function method for extracting contact resistance in back-gated, few-layer TMD FETs. Experimental findings show that the Y-Function method does not apply to the entire experimental range, particularly for layered material-based FETs. By thoroughly investigating the influence of the Schottky barrier and drain bias, the authors narrow down the extraction window/conditions for the Y-Function method, resulting in contact resistance estimation closer to the TLM-based approach for few-layer, back-gated TMD FETs.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Ling Tong, Xiaojiao Guo, Zhangfeng Shen, Lihui Zhou, Jingyi Ma, Xinyu Chen, Honglei Chen, Yin Xia, Chuming Sheng, Saifei Gou, Die Wang, Xinyu Wang, Xiangqi Dong, Yuxuan Zhu, Xinzhi Zhang, David Wei Zhang, Sheng Dai, Xi Li, Peng Zhou, Yangang Wang, Wenzhong Bao
Summary: This study developed a novel contact structure with transferred multilayer MoS2, achieving low contact resistivity through in-situ plasma treatment and metal deposition on the edge of the MoS2 channel. Thickness-dependent electrical measurement showed that edge contact is highly effective with thick MoS2, alleviating current-crowding effect. Temperature-dependent transport measurement further confirmed the advantages of this contact structure. Finally, a simplified resistor network model and energy-band diagram were proposed to explain the carrier transport mechanism.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2023)
Article
Materials Science, Multidisciplinary
Sahil Sharma, Carole-Anne Lernoud, Bruno Fain, Riadh Othmen, Vincent Bouchiat, Blaise Yvert, Clement Hebert
Summary: The development of wireless and battery-free sensors for biomedical applications is a rapidly growing field that offers potential for improved patient comfort during diagnosis and treatment of chronic diseases. Ultrasonic powering and communication has the potential to further reduce sensor size for minimally invasive electronic implants. This study introduces the use of graphene solution-gated field-effect transistor as a new type of shunt load for ultrasound-based biosensors.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Engineering, Electrical & Electronic
Muhammad Asad, Kjell O. Jeppson, Andrei Vorobiev, Marlene Bonmann, Jan Stake
Summary: The high-frequency performance of top-gated graphene field-effect transistors (GFETs) can be improved by changing the optical phonon energy of the surrounding dielectric material, leading to an increase in charge carrier saturation velocity. Adding a high optical phonon energy Al2O3 interfacial buffer layer to GFETs can result in higher transit frequency and maximum frequency of oscillation, demonstrating an enhancement in charge carrier velocity and overall device performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Multidisciplinary
Po-Hsun Ho, Yu-Ying Yang, Sui-An Chou, Ren-Hao Cheng, Po-Heng Pao, Chao-Ching Cheng, Iuliana Radu, Chao-Hsin Chien
Summary: In this study, chloroauric acid was used as a strong p-dopant for high-performance WSe2 monolayer transistors. By designing a suitable doping spacer length, a normally off, high-performance underlap top-gate device can be achieved without the need for additional gating in the contact and spacer regions.
Article
Chemistry, Multidisciplinary
Abhinav Chandresh, Christof Woell, Lars Heinke
Summary: This study demonstrates the precise deposition of nanoporous metal-organic frameworks on graphene, yielding bilayers with excellent specificity and high sensitivity. This approach can solve the low specificity issue of graphene in sensor applications.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Computer Science, Software Engineering
Benjamin O'Driscoll
Summary: GFETs are active electronic components that utilize the modulation of charge carriers in a graphene channel for various applications. The software package SCRAMBLE, developed with Python, automates the processing of multiple back-gated electrical measurements from GFETs, including determining key points and calculating mobilities. This software can significantly speed up routine data processing tasks.
Article
Chemistry, Analytical
Yan Chen, Wenpeng Liu, Hao Zhang, Daihua Zhang, Xiaoliang Guo
Summary: The paper introduces a novel electrolyte-gated graphene field-effect transistor biosensor incorporating acoustic tweezers to enhance sensitivity. The working principle and effectiveness of acoustic tweezers for concentrating biomolecules are verified through experiments. Accumulating IgG molecules onto graphene significantly increases the sensitivity of the biosensor.
Article
Physics, Applied
Hanying Chen, Tianlin Li, Yifei Hao, Anil Rajapitamahuni, Zhiyong Xiao, Stefan Schoeche, Mathias Schubert, Xia Hong
Summary: We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in ferroelectric-gated monolayer graphene. Through the fabrication of monolayer graphene transistors gated by epitaxial (001) Ba0.6Sr0.4TiO3 films, we achieved a field effect mobility of up to 23,000 cm(2)V-1 s(-1). We also discovered that switching ferroelectric polarization can nonvolatilely modulate the resistance and quantum Hall effect in graphene at low temperatures. Using ellipsometry spectroscopy, we extracted the RSO phonon frequencies in Ba0.6Sr0.4TiO3.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Multidisciplinary Sciences
Sungjae Hong, Chang-Ui Hong, Sol Lee, Myeongjin Jang, Chorom Jang, Yangjin Lee, Livia Janice Widiapradja, Sam Park, Kwanpyo Kim, Young-Woo Son, Jong-Gwan Yook, Seongil Im
Summary: Graphene has been widely used as an insertion layer in vertically stacked devices due to its excellent electrical tunabilities. However, its implications at ultrahigh frequencies have been rarely explored. In this study, diode operation of vertical Pt/n-MoSe2/graphene/Au assemblies at a cutoff frequency of about 200 GHz was demonstrated. The electric charge modulation by the inserted graphene becomes essentially frozen above a few GHz frequencies, transforming the Ohmic graphene/MoSe2 junction into a pinning-free Schottky junction. The diodes with graphene insertion exhibit much lower total capacitance and an order of magnitude higher cutoff frequency compared to devices without graphene, highlighting the significance of graphene at high frequencies.
Article
Chemistry, Multidisciplinary
Yu-Chieh Chien, Xuewei Feng, Li Chen, Kai-Chun Chang, Wee Chong Tan, Sifan Li, Li Huang, Kah-Wee Ang
Summary: A universal and simple method has been developed in this study to accurately extract critical parameters in 2D FETs, including characteristic temperature (T-o), threshold voltage (V-T), R-SD, and mu(int), and the practicality of this method is extensively explored by characterizing the temperature-dependent carrier transport behavior and strain-induced band structure modification in 2D semiconductors.
ADVANCED FUNCTIONAL MATERIALS
(2021)
